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3N259 Schematic ( PDF Datasheet ) - General Semiconductor

Teilenummer 3N259
Beschreibung GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
Hersteller General Semiconductor
Logo General Semiconductor Logo 




Gesamt 2 Seiten
3N259 Datasheet, Funktion
2KBP005M THRU 2KBP10M SERIES
3N253 THRU 3N259
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
0.125 x 45o
(3.2)
Case Style KBPM
0.600 (15.24)
0.560 (14.22)
0.460 (11.68) 0.500 (12.70)
0.420 (10.67) 0.460 (11.68)
60
(15.2)
MIN.
0.034 (8.6)
0.028 (7.6)
DIA.
0.200 (5.08)
0.180 (4.57)
0.060
(1.52)
0.160 (4.1)
0.140 (3.6)
0.50
(12.7)
MIN.
0.105 (2.67)
0.085 (2.16)
Polarity shown on front side of case: positive lead by beveled corner
Dimensions in inches and (millimeters)
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
This series is UL listed under the Recognized Component
Index, file number E54214
Glass passivated chip junctions
Typical IR less than 0.1µA
High case dielectric strength
Ideal for printed circuit boards
High temperature soldering guaranteed:
260°C/10 seconds at 5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
Weight: 0.06 ounce, 1.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
* Maximum repetitive peak reverse voltage
* Maximum RMS voltage
* Maximum DC blocking voltage
* Maximum average forward output rectified current
at TA=55°C
* Peak forward surge current single half sine-wave
superimposed on rated load (JEDEC Method) TJ=150°C
Rating for fusing (t < 8.3ms)
VRRM
VRMS
VDC
I(AV)
IFSM
I2t
* Maximum instantaneous forward voltage drop
per leg at 3.14A
VF
* Maximum DC reverse current
at rated DC blocking voltage per leg
TA=25°C
TA=125°C
IR
Typical junction capacitance per leg (NOTE 1)
CJ
Typical thermal resistance per leg (NOTE 2)
RΘJA
RΘJL
* Operating junction and storage temperature range TJ, TSTG
2KBP
005M
3N253
50
35
50
2KBP
01M
3N254
100
70
100
2KBP
02M
3N255
200
140
200
2KBP
04M
3N256
400
280
400
2KBP
06M
3N257
600
420
600
2.0
60.0
15.0
1.1
5.0
500.0
25.0
30.0
11.0
-55 to +165
2KBP
08M
3N258
800
560
800
2KBP
10M
3N259
UNITS
1000
700
1000
Volts
Volts
Volts
Amps
Amps
A2sec
Volts
µA
pF
°C/W
°C
NOTES:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(2) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.47 x 0.47” (12 x 12mm) copper pads
* JEDEC registered values
4/98





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