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Número de pieza | 3N164 | |
Descripción | P-CHANNEL ENHANCEMENT MODE | |
Fabricantes | Linear Integrated Systems | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 3N164 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Linear Integrated Systems
3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
MOSFET
FEATURES
VERY HIGH INPUT IMPEDANCE
HIGH GATE BREAKDOWN
ULTRA LOW LEAKAGE
FAST SWITCHING
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
@ 25°C (unless otherwise noted)
Drain-Source or Drain-Gate Voltage
3N163
3N164
Transient G-S Voltage (NOTE 1)
Drain Current
Storage Temperature
Power Dissipation
-40V
-30V
±125V
50mA
-65°C to +200°C
375mW
D
G
18 X 30 MILS
S
Case
G
2
1
D
Case
3
4
S
TO-72
Bottom View
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
3N163
3N164
MIN MAX MIN MAX
IGSSF
BVDSS
BVSDS
VGS(th)
VGS(th)
VGS
IDSS
ISDS
rDS(on)
ID(on)
gfs
gos
Ciss
Crss
Coss
Gate Forward Current
-10
TA=+125°C
Drain-Source Breakdown Voltage -40
Source-Drain Breakdown Voltage -40
Threshold Voltage
-2.0
Threshold Voltage
-2.0
Gate Source Voltage
-3.0
Zero Gate Voltage Drain Current
Source Drain Current
Drain-Source on Resistance
On Drain Current
-5.0
Forward Transconductance
2000
Output Admittance
Input Capacitance-Output Shorted
Reverse Transfer Capacitance
Output Capacitance Input Shorted
-25
-5.0
-5.0
-6.5
200
400
250
-30
4000
250
2.5
0.7
3.0
-10
-30
-30
-2.0
-2.0
-3.0
-3.0
1000
pA
-25
-5.0
-5.0
-6.5
400
800
300
-30
4000
250
2.5
0.7
3.0
UNITS CONDITIONS
VGS=-40V
VDS=0 (3N163)
VGS=-30V
VDS=0 (3N164)
ID=-10µA
VGS=0
V IS=-10µA
VGD=0 VBD=0
VDS=VGS
ID=-10µA
VDS=-15V
ID=-10µA
VDS=-15V
ID=-0.5mA
pA VDS=-15V
VGS=0
VDS=15V
VGS=VDB=0
ohms VGS=-20V
ID=-100µA
mA VDS=-15V
VGS=-10V
µs VDS=-15V
ID=-10mA f=1kHz
pF VDS=-15V
(NOTE 2)
ID=-10mA f=1MHz
Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 3N164.PDF ] |
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