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PDF 30JL2C41 Data sheet ( Hoja de datos )
| Número de pieza | 30JL2C41 | |
| Descripción | SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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30JL2C41
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
30JL2C41
SWITCHING MODE POWER SUPPLY APPLICATON
CONVERTER & CHOPPER APPLICATION
Unit: mm
! Repetitive Peak Reverse Voltage : VRRM = 600 V
! Average Output Rectified Current : IO = 30 A
! Ultra Fast Reverse-Recovery Time : trr = 50 ns (Max)
! Low Switching Losses and Output Noise
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Peak One Cycle Surge Forward
Current (Sine Wave)
Junction Temperature
Storage Temperature Range
Screw Torque
SYMBOL
VRRM
IO
IFSM
Tj
Tstg
―
RATING
600
30
150 (50Hz)
165 (60Hz)
−40~150
−40~150
0.8
UNIT
V
A
A
°C
°C
N·m
JEDEC
JEITA
TOSHIBA
Weight: 4.85g
―
―
12−16D1A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward Voltage
Repetitive Peak Reverse Current
Reverse Recovery time
Forward Recovery time
Thermal Resistance
VFM
IRRM
trr
tfr
Rth (j−c)
IFM = 15A
VRRM = 600V
IF = 2A, di / dt = −50A / µs
IF = 1A
Total DC, Junction to Case
VFM, IRRM, trr, tfr : A value applied to one cell.
MIN MAX UNIT
― 2.0 V
― 50 µA
― 50 ns
― 150 ns
― 1.0 °C / W
POLARITY
1 2005-08-02
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 30JL2C41.PDF ] | |
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