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Teilenummer | D1203UK |
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Beschreibung | METAL GATE RF SILICON FET | |
Hersteller | Seme LAB | |
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Gesamt 2 Seiten MECHANICAL DATA
A
B
12
4
M
3
G
C
D
E
F
HK
PIN 1
PIN 3
SOURCE
SOURCE
IJ
DM
PIN 2 DRAIN
PIN 4 GATE
DIM mm
A 24.76
B 18.42
C 45°
D 6.35
E 3.17 Dia
F 5.71
G 12.7 Dia
H 6.60
I 0.13
J 4.32
K 3.17
M 26.16
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45°
0.25
0.125 Dia
0.225
0.500 Dia
0.260
0.005
0.170
0.125
1.03
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
TetraFET
D1203UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
30W – 12.5V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• USEFUL PO AT 1GHz
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
117W
BVDSS
Drain – Source Breakdown Voltage
40V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
15A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 10/99
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ D1203UK Schematic.PDF ] |
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