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D1015UK Schematic ( Datenblatt PDF ) - Seme LAB

Teilenummer D1015UK
Beschreibung METAL GATE RF SILICON FET
Hersteller Seme LAB
Logo Seme LAB Logo 

Gesamt 4 Seiten
		
D1015UK Datasheet, Funktion
TetraFET
D1015UK
MECHANICAL DATA
C
AD
B
(4 pls)
2
1
3
54
I
F
G
(t yp )
E
PIN 1
PIN 3
PIN 5
NM
H
DH
SOURCE (COMMON)
DRAIN 2
GATE 1
JK
PIN 2
PIN 4
DRAIN 1
GATE 2
DIM mm
A 13.97
B 5.72
C 45°
D 9.78
E 1.65R
F 23.75
G 1.52R
H 30.48
I 19.17
J 0.13
K 2.54
M 1.52
N 5.08
Tol. Inches Tol.
0.26 0.550 0.010
0.13 0.225 0.005
5° 45° 5°
0.13 0.385 0.005
0.13 0.065R 0.005
0.13 0.935 0.005
0.13 0.060R 0.005
0.13 1.200 0.005
0.26 0.755 0.010
0.02 0.005 0.001
0.13 0.100 0.005
0.13 0.060 0.005
0.50 0.200 0.020
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
125W – 28V – 400MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 400 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
350W
BVDSS
Drain – Source Breakdown Voltage *
70V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
20A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00


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