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D1013UK Schematic ( Datenblatt PDF ) - Seme LAB

Teilenummer D1013UK
Beschreibung METAL GATE RF SILICON FET
Hersteller Seme LAB
Logo Seme LAB Logo 

Gesamt 6 Seiten
		
D1013UK Datasheet, Funktion
MECHANICAL DATA
C
2
1
A
3
F
(2 pls)
H
J
N
(typ)
B
D
(2 pls)
MI
PIN 1
PIN 3
SOURCE
GATE
E KG
DP
PIN 2 DRAIN
DIM mm
A 16.51
B 6.35
C 45°
D 3.30
E 18.92
F 1.52
G 2.16
H 14.22
I 1.52
J 6.35
K 0.13
M 5.08
N 1.27 x 45°
Tol. Inches Tol.
0.25 0.650 0.010
0.13 0.250 0.005
5° 45° 5°
0.13 0.130 0.005
0.08 0.745 0.003
0.13 0.060 0.005
0.13 0.085 0.005
0.08 0.560 0.003
0.13 0.060 0.005
0.13 0.250 0.005
0.03 0.005 0.001
0.51 0.200 0.020
0.13 0.050 x 45° 0.005
TetraFET
D1013UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 28V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• USEFUL PO AT 1GHz
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
50W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
5A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 12/00






D1013UK Datasheet, Funktion
D1013UK
G a te -B ia s
10K
1nF
D 1013U K
30pF
1 -1 0 p F
3 .3 K
T1
1 -1 0 p F
10nF
6 x 3m m
c o n ta c t p a d
T2
8 .2 p F
1nF
6 .8 n F
6x3mm
c o n ta c t p a d
T3
L1
T4
1 0 p F 1 -1 0 p F
10
L2
T5
+28V
100uF
30pF
1GHz Test Fixture
Substrate 0.8mm PTFE/glass, Er = 2.5
All microstrip lines W = 2.2mm
T1 35mm
T2 15mm
T3 4mm
T4 14mm
T5 32mm
L1 7.5 turns 24swg enamelled copper wire 3mm i.d.
L2 1.5 turns 24swg enamelled copper wire on ferrite core
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 12/00

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