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D1005 Schematic ( Datenblatt PDF ) - Seme LAB

Teilenummer D1005
Beschreibung METAL GATE RF SILICON FET
Hersteller Seme LAB
Logo Seme LAB Logo 

Gesamt 4 Seiten
		
D1005 Datasheet, Funktion
MECHANICAL DATA
A
B
12
4
M
3
C
D
E
F
G
HK
PIN 1
PIN 3
SOURCE
SOURCE
DM
PIN 2
PIN 4
IJ
DRAIN
GATE
DIM mm
A 24.76
B 18.42
C 45°
D 6.35
E 3.17 Dia.
F 5.71
G 12.7 Dia.
H 6.60
I 0.13
J 4.32
K 3.17
M 26.16
Tol.
0.13
0.13
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45°
0.25
0.125 Dia.
0.225
0.500 Dia.
0.260
0.005
0.170
0.125
1.03
Tol.
0.005
0.005
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
TetraFET
D1005UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
80W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
HF/VHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
146W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
20A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/99


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