(PDF) D2293 Datasheet - METAL GATE RF SILICON FET

Número de pieza	D2293
Descripción	METAL GATE RF SILICON FET
Fabricantes	Seme LAB
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No Preview Available ! MECHANICAL DATA PIN 1 PIN 3 PIN 5 SOT 171 SOURCE GATE SOURCE PIN 2 PIN 4 PIN 6 SOURCE DRAIN SOURCE TetraFET D2293UK METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 11 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 42W BVDSS Drain – Source Breakdown Voltage 40V BVGSS Gate – Source Breakdown Voltage ±20V ID(sat) Drain Current * 8A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website http://www.semelab.co.uk Prelim. 7/99 1 page

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PDF D2293 Data sheet ( Hoja de datos )