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DD100HB120 Schematic ( PDF Datasheet ) - ETC

Teilenummer DD100HB120
Beschreibung DIODE MODULE
Hersteller ETC
Logo ETC Logo 




Gesamt 2 Seiten
DD100HB120 Datasheet, Funktion
DIODE MODULE
DD(KD)100HB120/160
Power Diode Module DD100HB series are designed for various rectifier circuits.
DD100HB has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage rating up to,
1,600V is avaiable for various input voltage.
Isolated mounting base
Two elements in a package for simple (single and three phase) bridge
connections
Highly reliable glass passivated chips
High surge current capability
Applications
Various rectifiers, Battery chargers, DC motor drives
UL;E76102 M
Unit a
Maximum Ratings
Symbol
Item
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
DF100HB120
1200
1350
Ratings
DD100HB160
1600
1700
Tj 25
Unit
V
V
Symbol
IF AV
IF (RMS)
IFSM
I2t
Tj
Tstg
VISO
Item
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
I2t
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mounting M6
Terminal M5
Mass
Conditions
Single phase, half wave, 180 conduction, Tc 111
Single phase, half wave, 180 conduction, Tc 111
1 2 cycle, 50/60HZ, peak value, non-repetitive
Value for one cycle of surge current
A.C.1minute
Recommended Value 2.5 3.9 25 40
Recommended Value 1.5 2.5 15 25
Ratings
100
155
1800/2000
16500
40 150
40 125
2500
4.7 48)
2.7 28)
170
Unit
A
A
A
A2S
V
Nm
fB
g
Electrical Characteristics
Symbol
Item
IRRM Repetitive Peak Reverse Current, max.
VFM Forward Voltage Drop, max.
Rth j-c Thermal Impedance, max.
Conditions
at VDRM, single phase, half wave. Tj 150
Foward current 320A Tj 25 Inst. measurement
Junction to case
Ratings
30
1.35
0.30
Unit
mA
V
/W
77





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