Datenblatt-pdf.com


DCR818SG Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DCR818SG
Beschreibung Phase Control Thyristor
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 8 Seiten
DCR818SG Datasheet, Funktion
DCR818SG
Supersedes October 2000 version, DS4241-5.1
FEATURES
s Double Side Cooling
s High Surge Capability
APPLICATIONS
s High Power Drives
s High Voltage Power Supplies
s DC Motor Control
s Welding
s Battery Chargers
DCR818SG
Phase Control Thyristor
Advance Information
DS4241-6.0 July 2001
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dVdt*
dI/dt
4800V
529A
7500A
1000V/µs
150A/µs
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
DCR818SG48
DCR818SG47
DCR818SG46
DCR818SG45
DCR818SG44
Repetitive Peak
Voltages
VDRM VRRM
V
4800
4700
4600
4500
4400
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 75mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
Respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR818SG46
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
Outline type code: G.
See Package Details for further information.
Fig.1 Package outline
www.dynexsemi.com
1/8






DCR818SG Datasheet, Funktion
DCR818SG
10000
Conditions:
Tj = 125˚C
QS is total integral stored charge
IT = 1000A
VR = 100V
1000
100
0.1
IT
QS
tp = 1ms
dI/dt
IRM
1.0 10
Rate of decay of on-state current, dI/dt - (A/µs)
100
Fig.4 Stored charge
0.1
Anode side cooled
100
Table gives pulse power PGM in Watts
Pulse width Frequency Hz
µs 50 100 400
100 150 150 150
200 150 150 125
500 150 150 100
1ms 150 100 25
10ms 20 - -
10
Tj = -40˚C
Tj = 25˚C
1
VGD
Upper limit 99%
Tj = 125˚C
Lower limit 1%
0.1
0.001
12.5
10.0
0.01 0.1
1
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics
10
IFGM
I2t = Î2 x t
2
Double side cooled
0.01
0.001
0.001
0.01
Conduction Effective thermal resistance
Junction to case ˚C/W
Double side
d.c. 0.032
Halfwave
0.034
3 phase 120˚ 0.044
6 phase 60˚ 0.057
Single side
0.064
0.066
0.076
0.089
0.1
Time - (s)
1.0
10
Fig.6 Transient thermal impedance - junction to case
6/8
7.5 200
5.0
I2t
2.5
150
100
0 50
1 10 1 2 3 45 10 20 30 50
ms Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase = 125˚C)
www.dynexsemi.com

6 Page







SeitenGesamt 8 Seiten
PDF Download[ DCR818SG Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
DCR818SGPhase Control ThyristorDynex Semiconductor
Dynex Semiconductor
DCR818SG44Phase Control ThyristorDynex Semiconductor
Dynex Semiconductor
DCR818SG45Phase Control ThyristorDynex Semiconductor
Dynex Semiconductor
DCR818SG46Phase Control ThyristorDynex Semiconductor
Dynex Semiconductor
DCR818SG47Phase Control ThyristorDynex Semiconductor
Dynex Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche