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DCR803SG17 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DCR803SG17
Beschreibung Phase Control Thyristor
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 8 Seiten
DCR803SG17 Datasheet, Funktion
DCR803SG
Supersedes January 2000 version, DS4451-4.0
FEATURES
s Double Side Cooling
s High Surge Capability
s High Mean Current
s Fatigue Free
APPLICATIONS
s High Power Drives
s High Voltage Power Supplies
s DC Motor Control
DCR803SG
Phase Control Thyristor
Advance Information
DS4451-5.0 July 2001
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dVdt
1800V
1045A
14000A
1000V/µs
dI/dt 1000A/µs
VOLTAGE RATINGS
Type Number
DCR803SG18
DCR803SG17
DCR803SG16
DCR803SG15
DCR803SG14
Repetitive Peak
Voltages
VDRM VRRM
V
1800
1700
1600
1500
1400
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
I = I = 50mA,
DRM RRM
VDRM, VRRM tp = 10ms,
V &V =
DSM
RSM
VDRM & VRRM + 100V
respectively
Outline type code: G.
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR806SG26
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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1/8






DCR803SG17 Datasheet, Funktion
DCR803SG
10000
IT
dI/dt
QS
IRR
IT = 1250A
IT = 500A
Max. value
100
Pulse width Frequency Hz Table gives pulse power PGM in Watts
µs 50 100 400
100 150 150 150
200 150 150 125
500 150 150 100
1ms 150 100 25
10ms 20 - -
10
1000
IT = 1250A
IT = 500A
Min. value
100
0.1
Conditions:
QS is total integral stored charge
Tj = 125˚C
1.0 10
Rate of decay of on-state current, dI/dt - (A/µs)
100
Fig.4 Stored charge
Upper limit 99%
1
VGD Lower limit 99%
Region of
certain triggering
0.1
0.001
0.01 0.1
1
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics
10
IFGM
0.1 25
Anode side cooled
20
Double side cooled
15
0.01
10
I2t = Î2 x t
2
600
500
0.001
0.001
0.01
Conduction Effective thermal resistance
Junction to case ˚C/W
Double side
d.c. 0.032
Halfwave
0.034
3 phase 120˚ 0.044
6 phase 60˚ 0.057
Anode side
0.064
0.066
0.076
0.089
0.1
Time - (s)
1.0
10
Fig.6 Maximum (limit) transient thermal impedance -
junction to case
I2t
5
0 400
1 10 1 2 3 4 5 10 20 30 50
ms Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase 125˚C)
6/8
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