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DCR720E Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DCR720E
Beschreibung Phase Control Thyristor Preliminary Information
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 9 Seiten
DCR720E Datasheet, Funktion
DCR720E
FEATURES
s Double Side Cooling
s High Surge Capability
s Low Inductance Internal Construction
APPLICATIONS
s High Power Converters
s DC Motor Control
s High Voltage Power Supplies
DCR720E
Phase Control Thyristor
Preliminary Information
DS5485-1.2 February 2002
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
1800V
724A
9800A
1000V/µs
700A/µs
*Higher dV/dt selections available
VOLTAGE RATINGS
Part and Ordering
Number
DCR720E18
DCR720E16
DCR720E14
DCR720E12
Repetitive Peak
Voltages
VDRM and VDRM
V
1800
1600
1400
1200
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 30mA,
V , V t = 10ms,
DRM RRM p
VDSM & VRSM =
V & V + 100V
DRM
RRM
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR720E16
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
Outline type code: E
(See Package Details for further information)
Fig. 1 Package outline
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DCR720E Datasheet, Funktion
DCR720E
10000
Conditions:
Tj = 125˚C
VR = 50V
tp = 1ms
1000
IT = 1500A
IT = 500A
100
0.1
IT
QR
tp
dIT/dt
0.25xIRM
IRM
1.0 10 100
Rate of decay of on-state current, dIT/dt - (A/µs)
Fig.4 Stored charge
0.1 Anode side cooled
100
Table gives pulse power PGM in Watts
Pulse width
µs
20
25
100
500
1ms
10ms
Frequency Hz
50 100 400
100 100 100
100 100 100
100 100 100
100 100 25
100 50 12.5
10 -
-
10
Upper limit 95%
1
VGD Lower limit 5%
Region of certain
triggering
0.1
0.001
0.01 0.1
1
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics
10
IFGM
25 0.75
Double side cooled
20
15
0.01
10
0.6
0.45
0.3
0.001
0.001
0.01
Conduction Effective thermal resistance
Junction to case ˚C/W
Double side
d.c. 0.041
Halfwave
0.044
3 phase 120˚ 0.051
6 phase 60˚ 0.061
Anode side
0.074
0.077
0.084
0.093
0.1
Time - (s)
1.0
10
Fig.6 Maximum (limit) transient thermal impedance -
junction to case (˚C/W)
6/9
5
0
1
ITSM (VR = 0)
0.15
ITSM (VR = 50% VRRM)
I2t (VR = 0)
I2t (VR = 50% VRRM)
0
2 3 4 5 6 7 8 9 10
Pulse lenght, half sine wave (ms)
Fig.7 Sub-cycle surge currents
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