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DCR604SE20 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DCR604SE20
Beschreibung Phase Control Thyristor
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 8 Seiten
DCR604SE20 Datasheet, Funktion
DCR604SE
Supersedes January 2000 version, DS4450-4.0
FEATURES
s Double Side Cooling
s High Surge Capability
s High Mean Current
s Fatigue Free
APPLICATIONS
s High Power Drives
s High Voltage Power Supplies
s DC Motor Control
DCR604SE
Phase Control Thyristor
Advance Information
DS4450-5.0 July 2001
KEY PARAMETERS
VDRM 2100V
IT(AV) 706A
ITSM 8100A
dVdt* 1000V/µs
dI/dt 700A/µs
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
DCR604SE21
DCR604SE20
DCR604SE19
DCR604SE18
DCR604SE17
Repetitive Peak
Voltages
VDRM VRRM
V
2100
2000
1900
1800
1700
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 30mA,
VDRM, VRRM tp = 10ms,
V &V =
DSM
RSM
VDRM & VRRM + 100V
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR604SE20
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
Outline type code: E
See Package Details for further information.
Fig. 1 Package outline
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1/8






DCR604SE20 Datasheet, Funktion
DCR604SE
10000
Conditions:
Tj = 125˚C
VR = 50V
tp = 1ms
1000
IT = 1500A
IT = 500A
100
0.1
IT
QR
tp
dIT/dt
0.25xIRM
IRM
1.0 10
Rate of decay of on-state current, dIT/dt - (A/µs)
100
Fig.4 Recovered charge
0.1 Anode side cooled
100
Table gives pulse power PGM in Watts
Pulse width
µs
20
25
100
500
1ms
10ms
Frequency Hz
50 100 400
100 100 100
100 100 100
100 100 100
100 100 25
100 50 12.5
10 -
-
10
Upper limit 95%
1
VGD Lower limit 5%
Region of certain
triggering
0.1
0.001
0.01 0.1
1
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics
10
IFGM
20
I2t = Î2 x t
2
Double side cooled
15
225
0.01 10 200
0.001
0.001
0.01
Conduction Effective thermal resistance
Junction to case ˚C/W
Double side
d.c. 0.041
Halfwave
0.044
3 phase 120˚ 0.051
6 phase 60˚ 0.061
Anode side
0.074
0.077
0.084
0.093
0.1
Time - (s)
1.0
10
Fig.6 Maximum (limit) transient thermal impedance -
junction to case
I2t
5
175
0 150
1 10 1 2 3 45 10 20 30 50
ms Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase 125˚C)
6/8
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