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DCR504ST14 Schematic ( Datenblatt PDF ) - Dynex Semiconductor

Teilenummer DCR504ST14
Beschreibung Phase Control Thyristor
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 

Gesamt 8 Seiten
		
DCR504ST14 Datasheet, Funktion
DCR504ST
Supersedes January 2000version, DS4448 -4.0
FEATURES
s Double Side Cooling
s High Surge Capability
s High Mean Current
s Fatigue Free
APPLICATIONS
s High Power Drives
s High Voltage Power Supplies
s DC Motor Control
DCR504ST
Phase Control Thyristor
Advance Information
DS4448 -5.0 July 2001
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dVdt
1400V
456A
6800A
1000V/µs
dI/dt 700A/µs
VOLTAGE RATINGS
Type Number
DCR504ST14
DCR504ST13
DCR504ST12
DCR504ST11
DCR504ST10
Repetitive Peak
Voltages
VDRM VRRM
V
1400
1300
1200
1100
1000
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 30mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR504ST12
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
Outline type code: T
See Package Details for further information.
Fig. 1 Package outline
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1/8






DCR504ST14 Datasheet, Funktion
DCR504ST
10000
IT
tp
dIT/dt
QR
0.25xIRM
IRM
1000
Conditions:
Tj = 125˚C
VR = 50V
tp = 1ms
100
IT = 300A
10
Upper limit 95%
100
0.1
1.0 10
Rate of decay of on-state current, dIT/dt - (A/µs)
Fig.4 Recovered charge
100
1.0
1
VGD Lower limit 5%
Region of certain
triggering
0.1
0.001
0.01 0.1
1
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics
10
IFGM
20
I2t = Î2 x t
2
15
Anode side cooled
0.1
Double side cooled
10
150
0.01
0.001
0.001
0.01
Conduction Effective thermal resistance
Junction to case ˚C/W
Double side
d.c. 0.063
Halfwave
0.073
3 phase 120˚ 0.093
6 phase 60˚ 0.112
Anode side
0.11
0.12
0.14
0.16
0.1
Time - (s)
1
10
Fig.6 Maximum (limit) transient thermal impedance -
junction to case
I2t
5
100
0 50
1 10 1 2 3 45 10 20 30 50
ms Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase 125˚C)
6/8
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