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DCR1675SZ51 Schematic ( Datenblatt PDF ) - Dynex Semiconductor

Teilenummer DCR1675SZ51
Beschreibung Phase Control Thyristor
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 

Gesamt 8 Seiten
		
DCR1675SZ51 Datasheet, Funktion
DCR1675SZ
Supersedes January 2000 version, DS4648-6.0
FEATURES
s Double Side Cooling
s High Surge Capability
s High Mean Current
s Fatigue Free
APPLICATIONS
s High Power Drives
s High Voltage Power Supplies
s DC Motor Control
DCR1675SZ
Phase Control Thyristor
Advance Information
DS4648 -7.1 July 2001
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dVdt*
dI/dt
5200V
3770A
50000A
1000V/µs
300A/µs
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
DCR1675SZ52
DCR1675SZ51
DCR1675SZ50
DCR1675SZ49
DCR1675SZ48
Repetitive Peak
Voltages
VDRM VRRM
V
5200
5100
5000
4900
4800
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 500mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1675SZ51
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
Outline type code: Z.
See Package Details for further information.
Fig. 1 Package outline
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DCR1675SZ51 Datasheet, Funktion
DCR1675SZ
100000
Tj = 125˚C
IT = 600A
100 Table gives pulse power PGM in Watts
Pulse Width Frequency Hz
µs 50 100 400
100 150 150 150
200 150 150 125
500 150 150 100
1ms 150 100 25
10ms
10
20 - -
100W
50W
20W
10W
VFGM
10000
1
1000
0.1
IT
QS
tp = 3ms
dI/dt
IRM
1.0 10
Rate of decay of on-state current dI/dt - (A/µs)
100
Fig.4 Stored charge
VGD
0.1
0.001
Upper
Limit
99%
Tj
=
25˚C
Lower Limit 1%
IGD
0.01 0.1
1.0
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics
IFGM
10
0.1
0.01
0.001
125
Anode side cooled
Double side cooled
100
75
50
I2t
I2t = Î2 x t
2
12.5
10.0
7.5
5.0
0.0001
0.001
0.01
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0065
0.0072
0.0073
0.0076
Anode side
0.0130
0.0137
0.0138
0.0141
0.1 1 10 100
Time - (s)
Fig.6 Transient thermal impedance - junction to case
25
2.5
00
1 10 1 2 3 45 10 20 30 50
ms Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase = 125˚C)
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