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DCR1673SZ26 Schematic ( Datenblatt PDF ) - Dynex Semiconductor

Teilenummer DCR1673SZ26
Beschreibung Phase Control Thyristor
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 

Gesamt 8 Seiten
		
DCR1673SZ26 Datasheet, Funktion
DCR1673SZ
DCR1673SZ
Phase Control Thyristor
Supersedes October 2000 version, DS4650-6.0
FEATURES
s Double Side Cooling
s High Surge Capability
s High Mean Current
s Fatigue Free
APPLICATIONS
s High Power Drives
s High Voltage Power Supplies
s DC Motor Control
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dVdt*
dI/dt
2800V
5088A
83000A
1000V/µs
250A/µs
*Higher dV/dt selections available
DS4650-7.0 July 2001
VOLTAGE RATINGS
Type Number
DCR1673SZ28
DCR1673SZ27
DCR1673SZ26
DCR1673SZ25
DCR1673SZ24
Repetitive Peak
Voltages
VDRM VRRM
V
2800
2700
2600
2500
2400
Lower voltage grades available.
Conditions
T = 0˚ to 125˚C,
vj
IDRM = IRRM = 500mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
Respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1673SZ27
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
Outline type code: Z.
See Package Details for further information.
Fig. 1 Package outline
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1/8






DCR1673SZ26 Datasheet, Funktion
DCR1673SZ
100000
Tj = 125˚C
IT = 3000A
100 Table gives pulse power PGM in Watts
Pulse Width Frequency Hz
µs 50 100 400
100 150 150 150
200 150 150 125
500 150 150 100
1ms 150 100 25
10ms
10
20 - -
100W
50W
20W
10W
VFGM
10000
1
VGD
1000
1
0.1
10
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.4 Recovered charge
100
0.1
0.001
200
Upper
Limit
99%
Tj
=
25˚C
Lower Limit 1%
IGD
0.01 0.1
1.0
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics
IFGM
10
150
Anode side cooled
0.01
Double side cooled
100
30
20
0.001
0.0001
0.001
0.01
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0065
0.0072
0.0073
0.0076
Anode side
0.0130
0.0137
0.0138
0.0141
0.1 1 10 100
Time - (s)
Fig.6 Transient thermal impedance - junction to case
6/8
I2t
50
10
00
1
10 1
5 10
50
ms Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase = 125˚C)
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