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DCR1576SY46 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DCR1576SY46
Beschreibung Phase Control Thyristor
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 9 Seiten
DCR1576SY46 Datasheet, Funktion
DCR1576SY
Replaces January 2000 version, DS4355-4.0
FEATURES
s Double Side Cooling
s High Surge Capability
s High Mean Current
s Fatigue Free
APPLICATIONS
s High Power Drives
s High Voltage Power Supplies
s DC Motor Control
DCR1576SY
Phase Control Thyristor
Advance Information
DS4355-5.0 July 2001
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dVdt*
dI/dt
5200V
2162A
40000A
1000V/µs
300A/µs
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
VV
DRM RRM
V
DCR1576SY52
DCR1576SY50
DCR1576SY48
DCR1576SY46
DCR1576SY44
DCR1576SY42
5200
5000
4800
4600
4400
4200
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 500mA,
V , V t = 10ms,
DRM RRM p
VDSM & VRSM =
V & V + 100V
DRM
RRM
Respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1575SY36
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
Outline type code: Y
See Package Details for further information.
(The DCR1576 is also available in a thin package, type code V.
Please contact Customer Services for more information).
Fig. 1 Package outline
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1/9






DCR1576SY46 Datasheet, Funktion
DCR1576SY
100000
Conditions:
Tj = 125˚C, VR = 1600V,
IT = 2000A
Snubber 1µF, 11 Ohms
10000
1000
Max. IRR
Min. IRR
Max. QS
Min. QS
100
1000
10
IT
100
0.1
QS
tp = 2ms
dI/dt
IRM 1
1.0 10 100
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.4 Stored charge
100
Table gives pulse power PGM in Watts
Pulse Width Frequency Hz
µs
100
200
500
1ms
10ms
50 100
150 150
150 150
150 150
150 100
20 -
400
150
125
100
25
-
10 50W
20W
10W
5W
2W
Tj = 125˚C
1
Upper
Limit 99%
Lower Limit
1%
Tj
=
Tj =
25˚C
-40˚C
0.1
0.001
0.01 0.1
1.0
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics
10
0.1 0.1000
Single side cooled
Single side cooled
0.01 0.0100
Double side cooled
Double side cooled
0.001
0.0001
0.001
0.01
Conduction
d.c.
half wave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case - ˚C/W
Double
Single
sided
sided
0.0095
0.019
0.0105
0.020
0.0112
0.0207
0.0139
0.0234
0.1 1.0 10 100
Time - (s)
Fig.6 Transient thermal impedance - junction to case
0.0010
0.0001
0.001
0.01
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective Thermal Resistance
Junction to heatsink - ˚C/W
Double
Sided
Single
Sided
0.0115
0.0125
0.0132
0.0159
0.0230
0.0240
0.0247
0.0274
0.1 1.0 10 100
Time - (s)
Fig.7 Transient thermal impedance - junction to heatsink
6/9
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