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DCR1478SY48 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DCR1478SY48
Beschreibung Phase Control Thyristor
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 8 Seiten
DCR1478SY48 Datasheet, Funktion
DCR1478SY
Replaces January 2000 version, DS4646-5.
FEATURES
s Double Side Cooling
s High Surge Capability
s High Mean Current
s Fatigue Free
APPLICATIONS
s High Power Drives
s High Voltage Power Supplies
s DC Motor Control
DCR1478SY
Phase Control Thyristor
Advance Information
DS4646-6.0 July 2001
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dVdt
4800V
2073A
27500A
1000V/µs
dI/dt 300A/µs
VOLTAGE RATINGS
Type Number
DCR1478SY48
DCR1478SY47
DCR1478SY46
DCR1478SY45
DCR1478SY44
Repetitive Peak
Voltages
VDRM VRRM
V
4800
4700
4600
4500
4400
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 250mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1478SY48
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
Outline type code: Y
See Package Details for further information.
(The DCR1478 is also available in a thin package, type code V.
Please contact Customer Services for more information).
Fig. 1 Package outline
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DCR1478SY48 Datasheet, Funktion
DCR1478SY
100000
IT
tp
dI/dt
QS
IRM
10000
IT = 1400A
1000
0.1
Conditions:
QS is total integral stored charge
Tj = 125˚C
1.0 10
Rate of decay of on-state current, dI/dt - (A/µs)
100
Fig.4 Stored charge
0.1
0.01
Anode side cooled
Double side cooled
100
Table gives pulse power PGM in Watts
VFGM
Pulse width
µs
100
200
500
1ms
10ms
Pulse frequency Hz
50 100 400
150 150 150
150 150 125
150 150 100
150 100 25
20 -
-
10
100W
50W
20W
10W
5W
2W
Upper limit 99%
1
Lower limit 1%
0.1
0.001
50
40
0.01 0.1
1
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics
10
I2t = Î2 x t
2
30 2.5
0.001
20 I2t
2.0
0.0001
0.001
0.01
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0095
0.0105
0.0112
0.0139
Anode side
0.019
0.020
0.0207
0.0234
0.1 1
Time - (s)
10 100
Fig.6 Transient thermal impedance - junction to case
10 1.5
0 1.0
1 10 1 2 3 45 10 20 30 50
ms Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRSM at Tcase = 125˚C)
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