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DCR1376SBA30 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DCR1376SBA30
Beschreibung Phase Control Thyristor
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 8 Seiten
DCR1376SBA30 Datasheet, Funktion
DCR1376SBA
Replaces October 2000 version, DS4598 -5.0
FEATURES
s Double Side Cooling
s High Surge Capability
s Low Turn-on Losses
APPLICATIONS
s High Voltage Power Converters
s High Voltage Power Supplies
s Motor Control
DCR1376SBA
Phase Control Thyristor
Advance Information
DS4598-6.0 July 2001
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dVdt
3600V
1690A
25000A
1000V/µs
dI/dt 300A/µs
VOLTAGE RATINGS
Type Number
DCR1376SBA36
DCR1376SBA34
DCR1376SBA32
DCR1376SBA30
DCR1376SBA28
Repetitive Peak
Voltages
VDRM VRRM
V
3600
3400
3200
3000
2800
Lower voltage grades available.
Conditions
T = 0˚ to 125˚C,
vj
IDRM = IRRM = 150mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1376SBA34
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
Outline type code: MU140.
See Package Details for further information.
Fig.1 Package outline
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1/8






DCR1376SBA30 Datasheet, Funktion
DCR1376SBA
10000
Conditions:
Tj = 125˚C
IT = 800A
VR = 100V
tp = 3ms - Trapezoidal
100
Table gives pulse power PGM in Watts
Pulse width
µs
100
200
500
1ms
10ms
Pulse frequency Hz
50 100 400
150 150 150
150 150 125
150 150 100
150 100 25
20 -
-
10
1000
100
0.1
IT
QS
dI/dt
IRR
1.0 10
Rate of decay of on-state current, dI/dt - (A/µs)
100
Fig.4 Stored charge
0.1
Anode side cooled
0.01 Double side cooled
1 Upper limit 95%
VGD
0.1
0.001
Lower limit 5% Region of certain
triggering
0.01 0.1
1
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics
10
IFGM
40
I2t = Î2 x t
2
30
20
0.001
0.0001
0.001
0.01
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0130
0.0141
0.0170
0.0200
Anode side
0.0210
0.0221
0.0250
0.0280
0.1 1
Time - (s)
10 100
Fig.6 Transient thermal impedance - junction to case
I2t
10
2.0
1.5
1.0
0.5
00
1 10 1 2 3 45 10 20 30 50
ms Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRSM at Tcase = 125˚C)
6/8
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