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DCR1374SBA08 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DCR1374SBA08
Beschreibung Phase Control Thyristor
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 8 Seiten
DCR1374SBA08 Datasheet, Funktion
DCR1374SBA
DCR1374SBA
Phase Control Thyristor
Replaces February 2001 version, DS4597-5.1
FEATURES
s Double Side Cooling
s High Surge Capability
s Low Turn-on Losses
APPLICATIONS
s High Voltage Power Converters
s DC Motor Control
s High Voltage Power Supplies
DS4597-5.2 July 2001
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dV/dt
(max)
(max)
dI/dt
1800V
2694A
50000A
1000V/µs
1000A/µs
VOLTAGE RATINGS
Part and Ordering
Number
DCR1374SBA18
DCR1374SBA16
DCR1374SBA14
DCR1374SBA12
DCR1374SBA10
DCR1374SBA08
Repetitive Peak
Voltages
VDRM and VDRM
V
1800
1600
1400
1200
1000
800
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 150mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1374SBA16
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
Outline type code: MU140
(See Package Details for further information)
Fig. 1 Package outline
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1/9






DCR1374SBA08 Datasheet, Funktion
DCR1374SBA
10000
Conditions:
Tj = 125˚C
IT = 800A
VR = 100V
tp = 1ms - Trapezoidal
100
Table gives pulse power PGM in Watts
Pulse width Pulse frequency Hz
µs 50 100 400
100 150 150 150
200 150 150 125
500 150 150 100
10 1ms 150 100 25
10ms 20 -
-
1000
100
0.1
IT
QS
dI/dt
IRR
1.0 10
Rate of decay of on-state current dI/dt - (A/µs)
100
1 Upper limit 95%
VGD
0.1
0.001
Lower limit 5%
Region of certain
triggering
0.01
0.1
1
Gate trigger current IGT - (A)
10
Fig.4 Stored charge
Fig.5 Gate characteristics
100 0.1
I2t = Î2 x t
2
Anode side cooled
75
0.01
Double side cooled
50 8
25
I2t
7
6
5
4
3
0
1 10 1 2 3 4 5 10 20 30 50
ms Cycles at 50Hz
Duration
Fig.6 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase 125˚C)
0.001
Conduction
Effective thermal resistance
Junction to case ˚C/W
Double side Anode side
d.c. 0.0130
0.0210
Halfwave 0.0141
0.0221
3 phase 120˚ 0.0170
0.0250
6 phase 60˚ 0.0200
0.0280
0.0001
0.001
0.01
0.1
1
10 100
Time - (s)
Fig.7 Maximum (limit) transient thermal impedance -
junction to case (˚C/W)
6/9
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