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DCR1279SD44 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DCR1279SD44
Beschreibung Phase Control Thyristor
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 9 Seiten
DCR1279SD44 Datasheet, Funktion
Replaces March 1998 version, DS4643-3.2
DCR1279SD
DCR1279SD
Phase Control Thyristor
Advance Information
DS4643-4.0 January 2000
APPLICATIONS
s High Power Drives
s High Voltage Power Supplies
s DC Motor Control
FEATURES
s Double Side Cooling
s High Surge Capability
s High Mean Current
s Fatigue Free
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dVdt*
4800V
1088A
15000A
300V/µs
dI/dt
200A/µs
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
DCR1279SD48
DCR1279SD47
DCR1279SD46
DCR1279SD45
DCR1279SD44
Repetitive Peak
Voltages
VDRM VRRM
V
4800
4700
4600
4500
4400
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 150mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Outline type code: D.
See package outline for further information.
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Symbol
Parameter
Conditions
Max. Units
Double Side Cooled
I
T(AV)
I
T(RMS)
Mean on-state current
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
Half wave resistive load,
-
-
1088
1709
1574
A
A
A
I
T(AV)
IT(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
762
1197
1034
A
A
A
1/9






DCR1279SD44 Datasheet, Funktion
DCR1279SD
10000 Conditions:
Tj = 125˚C
QS is total integral stored charge
IT = 1000A
1000
100
0.1
IT
QS
tp
dI/dt
IRM
1.0 10
Rate of decay of on-state current dI/dt - (A/µs)
Fig.3 Stored charge
100
100
VFGM
10
Table gives pulse power PGM in Watts
Pulse width
µs
100
200
500
1ms
10ms
Pulse frequency Hz
50 100 400
150 150 150
150 150 125
150 150 100
150 100 25
20 -
-
100W
50W
20W
10W
5W
2W
Tj = 25˚C
Upper limit 99%
Tj = 125˚C
Tj = -40˚C
1
Lower limit 1%
0.1
0.001
0.01
0.1
Gate trigger current IGT - (A)
Fig.4 Gate characteristics
1
10
IFGM
6/9

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