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DCR1277SD35 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DCR1277SD35
Beschreibung Phase Control Thyristor
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 9 Seiten
DCR1277SD35 Datasheet, Funktion
Replaces March 1998 version, DS4552-3.3
DCR1277SD
DCR1277SD
Phase Control Thyristor
DS4552-4.0 January 2000
APPLICATIONS
s High Power Drives.
s High Voltage Power Supplies.
s DC Motor Control.
FEATURES
s Double Side Cooling.
s High Surge Capability.
s High Mean Current.
s Fatigue Free.
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dVdt*
3600V
1259A
23750A
300V/µs
dI/dt
150A/µs
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
DCR1277SD36
DCR1277SD35
DCR1277SD34
DCR1277SD33
DCR1277SD32
Repetitive Peak
Voltages
VDRM VRRM
V
3600
3500
3400
3300
3200
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 150mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Outline type code: D.
See Package Details for further information.
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Symbol
Parameter
Conditions
Max. Units
Double Side Cooled
I
T(AV)
I
T(RMS)
Mean on-state current
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
Half wave resistive load
-
-
1259
1977
1832
A
A
A
I
T(AV)
IT(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
885
1390
1209
A
A
A
1/9






DCR1277SD35 Datasheet, Funktion
DCR1277SD
10000
Conditions:
Tj = 125˚C
QS is total integral stored
charge
IT = 2000A
IT = 1000A
1000
100
0.1
IT
QS
tp
dI/dt
IRM
1.0 10
Rate of decay of on-state current dI/dt - (A/µs)
Fig.3 Stored charge
100
100
VFGM
10
Table gives pulse power PGM in Watts
Pulse width Pulse frequency Hz
µs
100
200
500
1ms
10ms
50 100 400
150 150 150
150 150 125
150 150 100
150 100 25
20 -
-
100W
50W
20W
10W
5W
2W
Tj = 25˚C
Upper limit 99%
Tj = 125˚C
Tj = -40˚C
1
Lower limit 1%
0.1
0.001
0.01
0.1
Gate trigger current IGT - (A)
Fig.4 Gate characteristics
1
10
IFGM
6/9

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