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DCR1260Y62 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DCR1260Y62
Beschreibung Phase Control Thyristor Target Information
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 10 Seiten
DCR1260Y62 Datasheet, Funktion
DCR1260Y
FEATURES
s Double Side Cooling
s High Surge Capability
s Low Inductance Internal Construction
APPLICATIONS
s High Power Converters
s DC Motor Control
s High Voltage Power Supplies
DCR1260Y
Phase Control Thyristor
Target Information
DS5498-1.2 February 2002
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dV/dt
(max)
dI/dt
6500V
1260A
20800A
1000V/µs
300A/µs
VOLTAGE RATINGS
Part and Ordering
Number
DCR1260Y65
DCR1260Y64
DCR1260Y63
DCR1260Y62
DCR1260Y61
DCR1260Y60
Repetitive Peak
Voltages
VDRM and VDRM
V
6500
6400
6300
6200
6100
6000
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 150mA,
V , V t = 10ms,
DRM RRM p
VDSM & VRSM =
V & V + 100V
DRM
RRM
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1260Y63
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
Outline type code: Y
(See Package Details for further information)
Fig. 1 Package outline
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DCR1260Y62 Datasheet, Funktion
DCR1260Y
10
Upper limit
9 Lower limit
8
7
6
Preferred gate drive area
Table gives pulse power PGM in Watts
Pulse Width Frequency Hz
5 µs 50 100 400
100 150 150 150
4
Tj = -40˚C
200 150 150 125
3 Tj = 25˚C
Tj = 125˚C
500
1000
10000
150 150 100
150 100 25
20 - -
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Gate trigger current, IGT - (A)
Fig.4 Gate characteristics
25
Upper Limit
Lower Limit
5W
20 10W
20W
50W
100W
15
10
5
0
0 1 2 3 4 5 6 7 8 9 10
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics
6/10
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