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DCR1008SF Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DCR1008SF
Beschreibung Phase Control Thyristor
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 8 Seiten
DCR1008SF Datasheet, Funktion
DCR1008SF
Replaces January 2000 version, DS4244-3.0
FEATURES
s Double Side Cooling
s High Surge Capability
APPLICATIONS
s High Power Drives
s High Voltage Power Supplies
s DC Motor Control
s Welding
s Battery Chargers
DCR1008SF
Phase Control Thyristor
Advance Information
DS4244-4.0 July 2001
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dVdt*
dI/dt
3600V
1051A
15000A
1000V/µs
200A/µs
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
DCR1008SF36
DCR1008SF35
DCR1008SF34
DCR1008SF33
DCR1008SF32
Repetitive Peak
Voltages
VDRM VRRM
V
3600
3500
3400
3300
3200
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 150mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1008SF35
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
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DCR1008SF Datasheet, Funktion
DCR1008SF
100000
IT
tp = 1.6ms
dI/dt
10000
QS
IRM
1000
10000
Max. QS
Min. QS
Max. IRR
Min. IRR
1000
100
100
0.1
Conditions:
Tj = 125˚C, IT = 3000A
10
1.0 10 100
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.4 Stored charge
0.1
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.022
0.024
0.026
0.027
Anode side
0.038
0.040
0.042
0.043
Anode side cooled
100
Pulse width Frequency Hz
µs
50 100 400
100 150 150 150
200 150 150 125
500 150 150 100
1ms 150 50 25
10ms 20 - -
Table gives pulse power PGM in Watts
10
Upper limit 95%
1
VGD
0.1
0.001
Lower limit 5%
Region of certain
triggering
0.01 0.1
1
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics
10
40
I2t = Î2 x t
2
30
Double side cooled
0.01
0.001
0.001
0.01 0.1
Time - (s)
1.0
10
Fig.6 Transient thermal impedance - junction to case
6/8
20 700
650
10
I2t
600
550
500
0 450
1 10 1 2 3 45 10 20 30 50
ms Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase = 125˚C)
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