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DCR1006SF24 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DCR1006SF24
Beschreibung Phase Control Thyristor
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 8 Seiten
DCR1006SF24 Datasheet, Funktion
DCR1006SF
Replaces January 2000 version, DS4644-6.0
FEATURES
s Double Side Cooling
s High Surge Capability
s Low Turn-on Losses
APPLICATIONS
s High Power Converters
s High Voltage Power Supplies
s DC Motor Control
DCR1006SF
Phase Control Thyristor
Advance Information
DS4644-7.0 July 2000
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dVdt*
dI/dt
2800V
1255A
20500A
1000V/µs
500A/µs
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
DCR1006SF28
DCR1006SF27
DCR1006SF26
DCR1006SF25
DCR1006SF24
Repetitive Peak
Voltages
VDRM VRRM
V
2800
2700
2600
2500
2400
Lower voltage grades available.
Conditions
T = 0˚ to 125˚C,
vj
IDRM = IRRM = 100mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1006SF25
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
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1/8






DCR1006SF24 Datasheet, Funktion
DCR1006SF
10000
IT
dI/dt
QS
IRR
1000
IT = 2000A
IT = 1000A
Max. value
IT = 2000A
IT = 1000A
Min. value
100
0.1
Conditions;
QS is total integral charge
Tl = 125˚C
1.0 10 100
Rate of decay of on-state current dI/dt - (A/µs)
Fig.4 Stored charge
100
Pulse width Frequency Hz
µs
50 100 400
100 150 150 150
200 150 150 125
500 150 150 100
1ms 150 50 25
10ms 20 - -
Table gives pulse power PGM in Watts
10
Upper limit 95%
1
VGD
0.1
0.001
Lower limit 5%
Region of certain
triggering
0.01 0.1
1
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics
10
0.1
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.022
0.024
0.026
0.027
Anode side
0.038
0.040
0.042
0.043
Anode side cooled
50
40
I2t = Î2 x t
2
1.5
0.01
Double side cooled
30
20
I2t
10
1.25
1.0
0.75
0.001
0.001
0.01 0.1
Time - (s)
1.0
10
Fig.6 Transient thermal impedance - junction to case
0 0.5
1 10 1 2 3 45 10 20 30 50
ms Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase = 125˚C)
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