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DCR1002SF14 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DCR1002SF14
Beschreibung Phase Control Thyristor
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 9 Seiten
DCR1002SF14 Datasheet, Funktion
DCR1002SF
Replaces April 2000 version, DS4243-4.3
FEATURES
s Double Side Cooling
s High Surge Capability
s Low Turn-on Losses
APPLICATIONS
s High Power Converters
s High Voltage Power Supplies
s DC Motor Control
DCR1002SF
Phase Control Thyristor
Advance Information
DS4243-5.0 July 2001
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dVdt*
dI/dt
1400V
1850A
32500A
1000V/µs
1000A/µs
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
DCR1002SF14
DCR1002SF13
DCR1002SF12
DCR1002SF11
DCR1002SF10
Repetitive Peak
Voltages
VDRM VRRM
V
1400
1300
1200
1100
1000
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 100mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1002SF12
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
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1/9






DCR1002SF14 Datasheet, Funktion
DCR1002SF
10000
Conditions: IT = 1000A, VR = 100V,
Tj = 125˚C
QS is total integral stored charge
1000
Max QS
Min QS
10000
Conditions: IT = 1000A, VR = 100V,
Tj = 125˚C
Max IRR
1000
Min IRR
IT
QS
100
0.1
dI/dt
IRR
1.0 10
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.4 Stored charge
100
100
Pulse width Frequency Hz
µs
50 100 400
100 150 150 150
200 150 150 125
500 150 150 100
1ms 150 50 25
10ms 20 - -
Table gives pulse power PGM in Watts
10
Upper limit 95%
1
VGD
0.1
0.001
Lower limit 5%
Region of certain
triggering
0.01 0.1
1
Gate trigger current, IGT - (A)
Fig.6 Gate characteristics
10
100
0.1
1.0 10
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.5 Reverse recovery current
100
0.1
Anode side cooled
Double side cooled
0.01
0.001
0.001
0.01
Conduction
Effective thermal resistance
Junction to case ˚C/W
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Double side
0.018
0.021
0.022
0.025
Anode side
0.036
0.038
0.040
0.043
0.1
Time - (s)
1.0
10
Fig.6 Transient thermal impedance - junction to case
6/9
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