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DCG010 Schematic ( PDF Datasheet ) - Sanyo Semicon Device

Teilenummer DCG010
Beschreibung Ultrahigh-Speed Switching Diode
Hersteller Sanyo Semicon Device
Logo Sanyo Semicon Device Logo 




Gesamt 2 Seiten
DCG010 Datasheet, Funktion
Ordering number:EN2791B
DCG010
Silicon Epitaxial Planar Type (Cathode Common)
Ultrahigh-Speed Switching Diode
Features
· Ideally suited for use in hybrid ICs because of very
small-sized package.
· Fast switching speed.
· Small interterminal capacitance.
Package Dimensions
unit:mm
1187A
[DCG010]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Symbol
VRM
VR
IFM
Average Rectified Current
IO
Surge Current(1µs)
IFSM
Allowable Power Dissipation
Junction Temperature
Storage Temperature
P
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Unit rating
Total rating
Unit rating
Total rating
Unit rating
total rating
Conditions
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
VF1 IF=1mA
VF2 IF=10mA
VF3 IF=100mA
IR1 VR=30V
IR2 VR=80V
C VR=0V, f=1MHz
trr IF=10mA, VR=6V, RL=50, Irr=0.1Irp
Marking:W6
Reverse Recovery Time Test Circuit
Electrical Connection
1:Anode1
2:Anode2
3:Cathode1, Cathode2
SANYO:MCP
Ratings
85
80
300
450
100
150
4
6
100
125
–55 to +150
Unit
V
V
mA
mA
mA
mA
A
A
mW
˚C
˚C
Ratings
min typ max
Unit
0.60 V
0.72 V
1.20 V
0.1 µA
0.5 µA
3.0 pF
4.0 ns
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/92995GI (KOTO)/5108TA, TS No.2791-1/2





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