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DCF010 Schematic ( PDF Datasheet ) - Sanyo Semicon Device

Teilenummer DCF010
Beschreibung Ultrahigh-Speed Switching Diode
Hersteller Sanyo Semicon Device
Logo Sanyo Semicon Device Logo 




Gesamt 2 Seiten
DCF010 Datasheet, Funktion
Ordering number:EN2789B
DCF010
Silicon Epitaxial Planar Type (Anode Common)
Ultrahigh-Speed Switching Diode
Features
· Ideally suited for use in hybrid ICs because of very
small-sized package.
· Fast switching speed.
· Small interterminal capacitance.
Package Dimensions
unit:mm
1186A
[DCF010]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Symbol
VRM
VR
IFM
Average Rectified Current
IO
Surge Current (1µs)
IFSM
Allowable Power Dissipation
Junction Temperature
Storage Temperature
P
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Unit rating
Total rating
Unit rationg
Total tating
Unit rating
total rating
Conditions
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
VF1
VF2
VF3
IR1
IR2
C
trr
Reverse Recovery Time Test Circuit
IF=1mA
IF=10mA
IF=100mA
VR=30V
VR=80V
VR=0V, f=1MHz
IF=10mA, VR=6V, RL=50, Irr=0.1Irp
Electrical Connection
1:Cathode1
2:Cathode2
3:Anode1, Anode2
SANYO:MCP
Ratings
85
80
300
450
100
150
4
6
100
125
–55 to +125
Unit
V
V
mA
mA
mA
mA
A
A
mW
˚C
˚C
Ratings
min typ max
Unit
0.61 V
0.74 V
1.20 V
0.1 µA
0.5 µA
4.0 pF
4.0 ns
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)92995GI(KOTO)/5108TA, TS No.2789-1/2





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