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Teilenummer | DBB10 |
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Beschreibung | 1.0A Single-Phase Bridge Rectifier | |
Hersteller | Sanyo Semicon Device | |
Logo | ||
Gesamt 2 Seiten Ordering number:EN1061D
DBB10
Diffused Junction Silicon Diode
1.0A Single-Phase Bridge Rectifier
Features
· Plastic molded structure.
· Peak reverse voltage:VRM=100 to 600V.
· Average rectified current:IO=1.0A.
Package Dimensions
unit:mm
1112
[DBB10]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Conditions
50Hz sine wave, 1cycle
Electrical Characteristics at Ta = 25˚C, per constituent element of bridge
DBB10B
100
→
→
→
→
DBB10E DBB10G
400 600
→ 1.0
→ 30
→ 150
→ –40 to +150
Unit
V
A
A
˚C
˚C
Parameter
Forward Voltage
Reverse Current
Symbol
Conditions
VF IF=0.5A
IR VRM:At each VRM
Ratings
min typ max
Unit
1.0 V
10 µA
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/62096GI (KOTO)/6038TA/5202KI, TS No.1061-1/2
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ DBB10 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
DBB10 | 1.0A Single-Phase Bridge Rectifier | Sanyo Semicon Device |
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