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Teilenummer | DAP236U |
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Beschreibung | Band switching diode | |
Hersteller | ROHM Semiconductor | |
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Gesamt 3 Seiten Diodes
Band switching diode
DAP236U
DAP236U
!Applications
High speed switching
!Features
1) Multiple diodes with common anode configuration.
(UMD3)
2) High reliability.
!Construction
Silicon epitaxial planar
!Circuit
!External dimensions (Units : mm)
DAP236U
2.0±0.2
1.3±0.1
0.65 0.65
0.9±0.1
0.3 0.6
0∼0.1
0.3±0.1
0.15±0.05
(All leads have the same dimensions)
ROHM : UMD3
EIAJ : SC-70
JEDEC : SOT-323
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
DC reverse voltage
Power dissipation
VR
P
Junction temperature
Tj
Storage temperature
Tstg
Limits
35
150
125
−55∼+125
Unit
V
mW
˚C
˚C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF − − 1.0
Reverse current
IR − − 10
Capacitance between terminals CT
− − 1.2
Forward operating resistance rF − − 0.90
Unit Conditions
V IF=10mA
nA VR=25V
pF VR=6V, f=1MHz
Ω IF=2mA, f=100MHz
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ DAP236U Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
DAP236U | Band switching diode | ROHM Semiconductor |
DAP236U | Band switching diode | ROHM Semiconductor |
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