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PDF AM83135-001 Data sheet ( Hoja de datos )
| Número de pieza | AM83135-001 | |
| Descripción | RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS | |
| Fabricantes | STMicroelectronics | |
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AM83135-001
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
10:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 1.0 W MIN. WITH 5.2 dB GAIN
.400 x .400 2NLFL (S042)
hermetically sealed
O RDER CODE
AM83135-001
BRANDING
83135-1
DE SC RI P TI O N
The AM83135-001 device is a medium power sili-
con bipolar NPN transistor specifically designed
for S-Band radar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and can withstand a 10:1 output VSWR.
Low RF thermal resistance, refractory/gold metal-
lization, and automatic wire bonding techniques
ensure high reliability and product consistency.
The AM83135-001 is supplied int the AMPAC™
Hermet ic/Ceramic package with internal In-
put/Output impedance matching circuitry, and is
intended for military and other high reliability ap-
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Sy mb o l
Parameter
PD IS S
IC
Power Dissipation*
Device Current*
(TC ≤100°C)
VCC Collector-Supply Voltage*
TJ Junction Temperature (Pulsed RF Operation)
TSTG
Storage Temperature
Va l u e
11.5
0.45
34
250
− 65 to +200
Unit
W
A
V
°C
°C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
February 3, 1997
13.0
°C/W
1/5
1 page  
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0213 rev. A
UDCS No. 1011416
AM83135-001
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously
supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
©1997 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea
Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland
Taiwan - Thailand - United Kingdom - U.S.A.
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