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PDF AM81214-006 Data sheet ( Hoja de datos )
| Número de pieza | AM81214-006 | |
| Descripción | RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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AM81214-006
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 5.5 W MIN. WITH 10 dB GAIN
.310 x .310 2LFL (S064)
hermetically sealed
ORDER CODE
AM81214-6
BRANDING
81214-6
DE SCRI P TI O N
The AM81214-006 device is a high power Class
C transistor specifically designed for L-Band Ra-
dar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding 5:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire
bonding techniques ensure high reliability and
product consistency.
AM81214-006 is supplied in the grounded IM-
PAC™ Hermetic Metal/Ceramic package with in-
ternal input/output matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
PDISS
IC
Power Dissipation*
Device Current*
(TC ≤ 100°C)
VCC Collector-Supply Voltage*
TJ Junction Temperature (Pulsed RF Operation)
T ST G
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
16.7
0.82
32
250
− 65 to +200
Unit
W
A
V
°C
°C
9.0 °C/W
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AM81214-006.PDF ] | |
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