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PDF HMC377QS16G Data sheet ( Hoja de datos )
| Número de pieza | HMC377QS16G | |
| Descripción | CELLULAR HIGH IP3 RFIC DOWNCONVERTER/ 0.8 - 1.0 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v00.0703
MICROWAVE CORPORATION
HMC377QS16G
CELLULAR HIGH IP3 RFIC
DOWNCONVERTER, 0.8 - 1.0 GHz
Typical Applications
The HMC377QS16G is ideal for:
• GSM & CDMA Infrastructure
• GPRS & EDGE Infrastructure
• Wireless Data/CDPD
12
Functional Diagram
Features
+15 dBm Input IP3, +29 dBm Output IP3
Low LO Drive: -5 dBm LO
Conversion Gain: 14 dB
Noise Figure: 11 dB
Positive Supply: +5V @ 135 mA
General Description
The HMC377QS16G is a linear downconverter
receiver IC suitiable for cellular infrastructure
applications from 0.8 - 1.0 GHz. An integrated mixer
coupled with a high dynamic range IF amplifier
achieves an input intercept point (IP3) of +15 dBm,
and an input P1dB of +3.5 dBm. The converter
provides a gain of 13.5 dB and only 11 dB typical
single side band noise figure. The IC operates from
a positive +5V rail consuming 135 mA of current
while requiring only -5 dBm LO drive. The design
requires no external baluns. The mixer supports IF
frequencies between 50 MHz and 250 MHz.
12 - 180
Electrical Specifications, TA = +25° C, LO = -5 dBm, IF = 70 MHz, Vdd = 5V
Parameter
Min. Typ. Max.
Frequency Range, RF & LO
0.8 - 1.0
Frequency Range, IF *
50 - 250
Conversion Gain
11 14
Noise Figure (SSB)
11
LO to RF Isolation
23 28
LO to IF Isolation
63 70 - 75
RF to IF Isolation
83 90 - 95
IP3 (Input)
12 15
1 dB Compression (Input)
+0.5
+3.5
LO Input Drive Level (Typical)
-10 to 0
Supply Current (Idd for IF + LO)
135
* IF matching must be tuned for optimal results. See application circuit herein.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
GHz
MHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
mA
1 page  
v00.0703
MICROWAVE CORPORATION
HMC377QS16G
CELLULAR HIGH IP3 RFIC
DOWNCONVERTER, 0.8 - 1.0 GHz
12
Absolute Maximum Ratings
RF / IF Input (Vdd= +5V)
LO Drive (Vdd= +5V)
Vdd (LO or IF)
Channel Temperature
Continuous Pdiss (T = 85°C)
(derate 17.4 mW/°C above 85°C)
Thermal Resistance (RTH)
(junction to lead)
Storage Temperature
Operating Temperature
+13 dBm
+15 dBm
+7 Vdc
150°C
0.881 W
57.3 °C/W
-65 to +150 °C
-40 to +85 deg °C
Typical Supply Current vs. Vdd
Vdd (Vdc) (LO & IF)
4.5
5.0
5.5
Idd (mA)
115
135
155
Downconverter will operate over above supply range.
Outline Drawing
12 - 184
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC377QS16G.PDF ] | |
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