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Número de pieza | HM628512CLP-7 | |
Descripción | 4 M SRAM (512-kword x 8-bit) | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HM628512CLP-7 (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
No Preview Available ! HM628512C Series
4 M SRAM (512-kword × 8-bit)
ADE-203-1212 (Z)
Preliminary
Rev. 0.0
Sep. 12, 2000
Description
The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,
higher performance and low power consumption by employing Hi-CMOS process technology. The device,
packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is
available for high density mounting. The HM628512C is suitable for battery backup system.
Features
• Single 5 V supply
• Access time: 55/70 ns (max)
• Power dissipation
Active: 50 mW/MHz (typ)
Standby: 10 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly TTL compatible: All inputs and outputs
• Battery backup operation
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.
1 page Function Table
WE CS
×H
HL
HL
LL
LL
Note: ×: H or L
OE
×
H
L
H
L
HM628512C Series
Mode
Not selected
Output disable
Read
Write
Write
VCC current
ISB, ISB1
I CC
I CC
I CC
I CC
Dout pin
High-Z
High-Z
Dout
Din
Din
Ref. cycle
—
—
Read cycle
Write cycle (1)
Write cycle (2)
Absolute Maximum Ratings
Parameter
Symbol
Power supply voltage
Voltage on any pin relative to VSS
Power dissipation
Operating temperature
VCC
VT
PT
Topr
Storage temperature
Tstg
Storage temperature under bias
Tbias
Notes: 1. VT min: –3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is 7.0 V.
Value
–0.5 to +7.0
–0.5*1 to VCC + 0.3*2
1.0
–20 to +70
–55 to +125
–20 to +85
Unit
V
V
W
°C
°C
°C
Recommended DC Operating Conditions (Ta = –20 to +70°C)
Parameter
Symbol
Min
Supply voltage VCC 4.5
VSS 0
Input high voltage
VIH
2.2
Input low voltage
VIL
–0.3*1
Note: 1. VIL min: –3.0 V for pulse half-width ≤ 30 ns.
Typ
5.0
0
—
—
Max
5.5
0
VCC + 0.3
0.8
Unit
V
V
V
V
5
5 Page Write Timing Waveform (2) (OE Low Fixed)
HM628512C Series
Address
CS
WE
Dout
Din
tWC
tCW tWR
*8 tAW
tWP
tAS
tWHZ
tOW
tOH
*9
*10
tDW tDH
Valid Data
*11
11
11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet HM628512CLP-7.PDF ] |
Número de pieza | Descripción | Fabricantes |
HM628512CLP-5 | 4 M SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
HM628512CLP-5SL | 4 M SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
HM628512CLP-7 | 4 M SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
HM628512CLP-7SL | 4 M SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
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