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PDF ADG779 Data sheet ( Hoja de datos )
| Número de pieza | ADG779 | |
| Descripción | CMOS 1.8 V to 5.5 V/ 2.5 ohm SPDT Switch/2:1 Mux In Tiny SC70 Package | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ADG779 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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a CMOS 1.8 V to 5.5 V, 2.5 ⍀
SPDT Switch/2:1 Mux In Tiny SC70 Package
ADG779
FEATURES
1.8 V to 5.5 V Single Supply
2.5 ⍀ On Resistance
0.75 ⍀ On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
6-Lead SC70 Package
Fast Switching Times
tON 20 ns
tOFF 6 ns
Typical Power Consumption (<0.01 W)
TTL/CMOS-Compatible
APPLICATIONS
Battery-Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
FUNCTIONAL BLOCK DIAGRAM
ADG779
S2
D
S1
IN
SWITCHES SHOWN FOR
A LOGIC "1" INPUT
GENERAL DESCRIPTION
The ADG779 is a monolithic CMOS SPDT (single-pole,
double-throw) switch. This switch is designed on a submi-
cron process that provides low power dissipation yet gives
high switching speed, low on resistance and low leakage
currents.
The ADG779 operates from a single supply range of 1.8 V
to 5.5 V, making it ideal for use in battery-powered instru-
ments and with the new generation of DACs and ADCs from
Analog Devices.
Each switch of the ADG779 conducts equally well in both
directions when on. The ADG779 exhibits break-before-make
switching action.
Because of the advanced submicron process, –3 dB bandwidth
of greater than 200 MHz can be achieved.
The ADG779 is available in a 6-lead SC70 package.
PRODUCT HIGHLIGHTS
1. Tiny 6-Lead SC70 Package.
2. 1.8 V to 5.5 V Single Supply Operation. The ADG779
offers high performance, including low on resistance and
fast switching times, and is fully specified and guaranteed
with 3 V and 5 V supply rails.
3. Very Low RON (5 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V
operation, RON is typically 40 Ω over the temperature range.
4. On-Resistance Flatness (RFLAT(ON)) (0.75 Ω typ).
5. –3 dB Bandwidth >200 MHz.
6. Low Power Dissipation. CMOS construction ensures low
power dissipation.
7. 14 ns Switching Times.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2001
1 page  
Typical Performance Characteristics–ADG779
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
VDD = 2.7V
TA = 25؇C
VDD = 3.0V
VDD = 5.0V
VDD = 4.5V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
TPC 1. On Resistance as a Function of VD (VS) Single
Supplies
0.15
0.10
0.05
VDD = 5V
VD = 4.5V/1V
VS = 1V/4.5V
ID, IS (ON)
0
–0.05
0
IS (OFF)
10 20 30 40 50 60 70 80 90
TEMPERATURE – ؇C
TPC 4. Leakage Currents as a Function of Temperature
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
+85؇C
+25؇C
–40؇C
VDD = 3V
0.5 1.0 1.5 2.0 2.5
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
3.0
TPC 2. On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 3 V
6.0
5.5 VDD = 5V
5.0
4.5
4.0
3.5 +85؇C
3.0
2.5 +25؇C
2.0 –40؇C
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
TPC 3. On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 5 V
0.15
0.10
VDD = 3V
VD = 3V/1V
VS = 1V/3V
0.05
ID, IS (ON)
0
–0.05
0
IS (OFF)
10 20 30 40 50 60 70 80 90
TEMPERATURE – ؇C
TPC 5. Leakage Currents as a Function of Temperature
10m
VDD = 5V
1m
100
10
1
100n
10n
1n
1
10 100 1k 10k 100k 1M 10M 100M
FREQUENCY – Hz
TPC 6. Supply Current vs. Input Switching Frequency
REV. 0
–5–
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ADG779.PDF ] | |
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