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Número de pieza | ADG736 | |
Descripción | CMOS Low Voltage 4 ohm Dual SPDT Switch | |
Fabricantes | Analog Devices | |
Logotipo | ||
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FEATURES
+1.8 V to +5.5 V Single Supply
2.5 ⍀ (Typ) On Resistance
Low On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
10-Lead SOIC Package
Fast Switching Times
tON 16 ns
tOFF 8 ns
Typical Power Consumption (<0.01 W)
TTL/CMOS Compatible
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample-and-Hold Systems
Audio Signal Routing
Audio and Video Switching
Mechanical Reed Relay Replacement
CMOS
Low Voltage 4 ⍀ Dual SPDT Switch
ADG736
FUNCTIONAL BLOCK DIAGRAM
ADG736
S1A
S1B
IN1
S2A
S2B
IN2
D1
D2
SWITCHES SHOWN FOR A LOGIC "1" INPUT
GENERAL DESCRIPTION
The ADG736 is a monolithic device comprising two indepen-
dently selectable CMOS SPDT switches. These switches are
designed on a submicron process that provides low power dissi-
pation yet gives high switching speed, low on resistance, low
leakage currents and wide input signal bandwidth.
The on resistance profile is very flat over the full analog signal
range. This ensures excellent linearity and low distortion when
switching audio signals. Fast switching speed also makes the
part suitable for video signal switching.
The ADG736 can operate from a single +1.8 V to +5.5 V sup-
ply, making it ideally suited to portable and battery powered
instruments.
Each switch conducts equally well in both directions when on
and has an input signal range that extends to the power supplies.
The ADG736 exhibits break-before-make switching action.
The ADG736 is available in a 10-lead µSOIC package.
PRODUCT HIGHLIGHTS
1. +1.8 V to +5.5 V Single Supply Operation.
The ADG736 offers high performance, including low on
resistance and fast switching times and is fully specified and
guaranteed with +3 V and +5 V supply rails.
2. Very Low RON (4.5 Ω Max at 5 V, 8 Ω Max at 3 V).
At supply voltage of +1.8 V, RON is typically 35 Ω over the
temperature range.
3. Low On-Resistance Flatness.
4. –3 dB Bandwidth >200 MHz.
5. Low Power Dissipation.
CMOS construction ensures low power dissipation.
6. Fast tON/tOFF.
7. Break-Before-Make Switching Action.
8. 10-Lead µSOIC Package.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 1998
1 page Typical Performance Characteristics–ADG736
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
VDD = +2.7V
TA = +25؇C
VDD = +3V
VDD = +4.5V
VDD = +5V
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VD OR VS – DRAIN OR SOURCE VOLTAGE – Volts
5
Figure 1. On Resistance as a Function of VD (VS) Single
Supplies
10m
1m
VDD = +5V
TA = +25؇C
100
10
1
100n
10n
1n
100
1k
10k 100k 1M 10M
FREQUENCY – Hz
Figure 4. Supply Current vs. Input Switching Frequency
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
+25؇C
+85؇C
VDD = +3V
– 40؇ C
0.5 1 1.5 2 2.5
VD OR VS – SOURCE OR DRAIN VOLTAGE – Volts
3
Figure 2. On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 3 V
0
VDD = +5V
TA = +25؇C
–2
–4
–6
10k
100k
1M 10M
FREQUENCY – HZ
100M
Figure 5. On Response vs. Frequency
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
VDD = +5V
+25؇C
+85؇C
– 40؇ C
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VD OR VS – DRAIN OR SOURCE VOLTAGE – Volts
5
Figure 3. On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 5 V
–30
–40
VDD = +5V, +3V
TA = +25؇C
–50
–60
–70
–80
–90
–100
–110
–120
–130
10k
100k
1M 10M
FREQUENCY – Hz
100M
Figure 6. Off Isolation vs. Frequency
REV. 0
–5–
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet ADG736.PDF ] |
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