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PDF ADG711 Data sheet ( Hoja de datos )
| Número de pieza | ADG711 | |
| Descripción | CMOS Low Voltage 4 ohm Quad SPST Switches | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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FEATURES
1.8 V to 5.5 V single supply
Low on resistance (2.5 Ω Typ)
Low on resistance flatness
−3 dB bandwidth > 200 MHz
Rail-to-rail operation
16-lead TSSOP and SOIC packages
Fast switching times: tON =16 ns, tOFF =10 ns
Typical power consumption (< 0.01 μW)
TTL/CMOS compatible
Qualified for automotive applications
APPLICATIONS
USB 1.1 signal switching circuits
Cell phones
PDAs
Battery-powered systems
Communication systems
Sample hold systems
Audio signal routing
Video switching
Mechanical reed relay replacement
GENERAL DESCRIPTION
The ADG711, ADG712, and ADG713 are monolithic CMOS
devices containing four independently selectable switches. These
switches are designed on an advanced submicron process that
provides low power dissipation yet gives high switching speed, low
on resistance, low leakage currents, and high bandwidth.
They are designed to operate from a single 1.8 V to 5.5 V supply,
making them ideal for use in battery-powered instruments and
with the new generation of DACs and ADCs from Analog Devices,
Inc. Fast switching times and high bandwidth make the parts
suitable for switching USB 1.1 data signals and video signals.
The ADG711, ADG712, and ADG713 contain four independent
single-pole/single-throw (SPST) switches. The ADG711 and
ADG712 differ only in that the digital control logic is inverted. The
ADG711 switches are turned on with a logic low on the appropriate
control input, while a logic high is required to turn on the switches
of the ADG712. The ADG713 contains two switches whose digital
control logic is similar to the ADG711, while the logic is inverted
on the other two switches.
Each switch conducts equally well in both directions when On. The
ADG713 exhibits break-before-make switching action.
CMOS Low Voltage, 4 Ω Quad,
SPST Switches
ADG711/ADG712/ADG713
FUNCTIONAL BLOCK DIAGRAM
S1 S1 S1
IN1 IN1 IN1
D1 D1 D1
S2 S2 S2
IN2 IN2 IN2
ADG711 D2
S3
ADG712 D2
S3
ADG713 D2
S3
IN3 IN3 IN3
D3 D3 D3
S4 S4 S4
IN4 IN4 IN4
D4 D4 D4
SWITCHES SHOWN FOR A LOGIC “1” INPUT
Figure 1.
The ADG711/ADG712/ADG713 are available in 16-lead TSSOP
and 16-lead SOIC packages.
PRODUCT HIGHLIGHTS
1. 1.8 V to 5.5 V Single-Supply Operation.
The ADG711, ADG712, and ADG713 offer high performance
and are fully specified and guaranteed with 3 V and 5 V
supply rails.
2. Very Low RON (4.5 Ω maximum at 5 V, 8 Ω maximum at 3 V).
At supply voltage of 1.8 V, RON is typically 35 Ω over the
temperature range.
3. Low On Resistance Flatness.
4. −3 dB Bandwidth >200 MHz.
5. Low Power Dissipation. CMOS construction ensures low
power dissipation.
6. Fast tON/tOFF.
7. Break-Before-Make Switching.
This prevents channel shorting when the switches are
configured as a multiplexer (ADG713 only).
8. 16-Lead TSSOP and 16-Lead SOIC Packages.
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113 ©2004–2011 Analog Devices, Inc. All rights reserved.
1 page  
ABSOLUTE MAXIMUM RATINGS
TA = +25°C, unless otherwise noted.
Table 3.
Parameter
Rating
VDD to GND
Analog, Digital Inputs1
−0.3 V to +6 V
−0.3 V to VDD +0.3 V or
30 mA, whichever occurs
first
Continuous Current, S or D
30 mA
Peak Current, S or D
100 mA (Pulsed at 1 ms,
10% duty cycle maximum)
Operating Temperature Range
−40°C to +85°C
Storage Temperature Range
−65°C to +150°C
Junction Temperature
150°C
TSSOP Package, Power Dissipation 430 mW
θJA Thermal Impedance
θJC Thermal Impedance
SOIC Package, Power Dissipation
150°C/W
27°C/W
520 mW
θJA Thermal Impedance
θJC Thermal Impedance
Lead Temperature, Soldering
125°C/W
42°C/W
Vapor Phase (60 sec)
215°C
Infrared (15 sec)
220°C
Soldering(Pb-Free)
Reflow, Peak Temperature
260(+0/−5)°C
Time at Peak Temperature
20 sec to 40 sec
ESD 2 kV
1 Overvoltages at IN, S or D will be clamped by internal diodes. Currents
should be limited to the maximum ratings given.
ADG711/ADG712/ADG713
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating may be applied at any
one time.
ESD CAUTION
Rev. B | Page 5 of 16
5 Page 
TERMINOLOGY
RON
Ohmic resistance between D and S.
ΔRON
On resistance match between any two channels, ie., RONmax −
RONmin.
RFLAT(ON)
Flatness is defined as the difference between the maximum and
minimum value of on resistance as measured over the specified
analog signal range.
IS (OFF)
Source leakage current with the switch off.
ID (OFF)
Drain leakage current with the switch off.
ID, IS (ON)
Channel leakage current with the switch on.
VD (VS)
Analog voltage on Terminals D, S.
CS (OFF)
Off switch source capacitance.
CD (OFF)
Off switch drain capacitance.
CD, CS (ON)
On switch capacitance.
ADG711/ADG712/ADG713
tON
Delay between applying the digital control input and the output
switching on.
tOFF
Delay between applying the digital control input and the output
switching off.
tD
Off time or on time measured between the 90% points of both
switches, when switching from one address state to another
(ADG713 only).
Crosstalk
A measure of unwanted signal that is coupled through from one
channel to another as a result of parasitic capacitance.
Off Isolation
A measure of unwanted signal coupling through an off switch.
Charge Injection
A measure of the glitch impulse transferred from the digital
input to the analog output during switching.
Bandwidth
The frequency at which the output is attenuated by 3 dB.
On Response
The frequency response of the on switch.
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet ADG711.PDF ] | |
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