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PDF ADG636 Data sheet ( Hoja de datos )
| Número de pieza | ADG636 | |
| Descripción | 1 pC Charge Injection/ 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ADG636 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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a 1 pC Charge Injection, 100 pA Leakage
CMOS ؎5 V/+5 V/+3 V Dual SPDT Switch
ADG636
FEATURES
1 pC Charge Injection
؎2.7 V to ؎5.5 V Dual Supply
+2.7 V to +5.5 V Single Supply
Automotive Temperature Range: –40؇C to +125؇C
100 pA (Max @ 25؇C) Leakage Currents
85 ⍀ Typ On Resistance
Rail-to-Rail Operation
Fast Switching Times
Typical Power Consumption (<0.1 W)
TTL/CMOS Compatible Inputs
14-Lead TSSOP Package
APPLICATIONS
Automatic Test Equipment
Data Acquisition Systems
Battery-Powered Instruments
Communication Systems
Sample-and-Hold Systems
Remote Powered Equipment
Audio and Video Signal Routing
Relay Replacement
Avionics
FUNCTIONAL BLOCK DIAGRAM
S1A 4
S1B 5
S2A 11
S2B 10
ADG636
6 D1
9 D2
LOGIC
1 14 2
A0 A1 EN
GENERAL DESCRIPTION
The ADG636 is a monolithic device, comprising two independently
selectable CMOS SPDT (Single Pole, Double Throw) switches.
When on, each switch conducts equally well in both directions.
The ADG636 operates from a dual ± 2.7 V to ± 5.5 V supply, or
from a single supply of +2.7 V to +5.5 V.
This switch offers ultralow charge injection of ± 1.5 pC over the
entire signal range and leakage current of 10 pA typical at 25°C.
It offers on-resistance of 85 Ω typ, which is matched to within
2 Ω between channels. The ADG636 also has low power dissi-
pation yet gives high switching speeds.
The ADG636 exhibits break-before-make switching action and
is available in a 14-lead TSSOP package.
PRODUCT HIGHLIGHTS
1. Ultralow Charge Injection (QINJ: ± 1.5 pC typ over full
signal range)
2. Leakage Current <0.25 nA max @ 85°C
3. Dual ± 2.7 V to ± 5 V or Single +2.7 V to +5.5 V Supply
4. Automotive Temperature Range: –40°C to +125°C
5. Small 14-Lead TSSOP Package
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002
1 page  
ABSOLUTE MAXIMUM RATINGS1
(TA = 25°C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6.5 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –6.5 V
Analog Inputs2 . . . . . . . . . . . . . . . . VSS – 0.3 V to VDD + 0.3 V
Digital Inputs2 . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V or
30 mA, Whichever Occurs First
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle max) . . . . . . . . . . 20 mA
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 10 mA
Operating Temperature Range
Automotive (Y Version) . . . . . . . . . . . . . . –40°C to +125°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
ADG636
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
TSSOP Package
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . 150°C/W
θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 27°C/W
Lead Temperature, Soldering (10 seconds) . . . . . . . . . . 300°C
IR Reflow, Peak Temperature . . . . . . . . . . . . . . . . . . 220°C
NOTES
1 Stresses above those listed under Absolute Maximum Ratings may cause
permanent damage to the device. This is a stress rating only; functional operation
of the device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2 Overvoltages at EN, A0, A1, S, or D will be clamped by internal diodes. Current
should be limited to the maximum ratings given.
Model
ADG636YRU
Temperature Range
–40°C to +125°C
ORDERING GUIDE
Package Description
Thin Shrink Small Outline (TSSOP)
Package Option
RU-14
PIN CONFIGURATION
A0 1
14 A1
EN
VSS
S1A
S1B
2 13 GND
3 ADG636 12 VDD
TOP VIEW
4 (Not To Scale) 11 S2A
5 10 S2B
D1 6
9 D2
NC 7
8 NC
NC = NO CONNECT
Table I. Truth Table
A1
A0 EN
ON Switch
X X0
0 01
0 11
1 01
1 11
NONE
S1A, S2A
S1B, S2A
S1A, S2B
S1B, S2B
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADG636 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. 0
–5–
5 Page 
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
14-Lead TSSOP Package
(RU-14)
0.201 (5.10)
0.193 (4.90)
14
1
PIN 1
0.006 (0.15)
0.002 (0.05)
8
0.177 (4.50)
0.169 (4.30)
0.256 (6.50)
0.246 (6.25)
7
0.0433 (1.10)
MAX
SEATING
PLANE
0.0256 0.0118 (0.30)
(0.65) 0.0075 (0.19)
BSC
8؇
0.0079 (0.20) 0؇
0.0035 (0.090)
0.028 (0.70)
0.020 (0.50)
ADG636
REV. 0
–11–
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet ADG636.PDF ] | |
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