ADG441 Datasheet PDF - Analog Devices
| Part Number | ADG441 | |
| Description | LC2MOS Quad SPST Switches | |
| Manufacturers | Analog Devices | |
| Logo |  |
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LC2MOS Quad SPST Switches
ADG441/ADG442/ADG444
FEATURES
44 V Supply Maximum Ratings
VSS to VDD Analog Signal Range
Low On Resistance (< 70 Ω)
Low ∆RON (9 Ω max)
Low RON Match (3 Ω max)
Low Power Dissipation
Fast Switching Times
tON < 110 ns
tOFF < 60 ns
Low Leakage Currents ( 3 nA max)
Low Charge Injection (6 pC max)
Break-Before-Make Switching Action
Latch-Up Proof
Plug-In Upgrade for
DG201A/ADG201A, DG202A/ADG202A,
DG211/ADG211A
Plug in Replacement for DG441/DG442/DG444
APPLICATIONS
Audio and Video Switching
Automatic Test Equipment
Precision Data Acquisition
Battery Powered Systems
Sample Hold Systems
Communication Systems
GENERAL DESCRIPTION
The ADG441, ADG442 and ADG444 are monolithic CMOS
devices comprising four independently selectable switches. They
are designed on an enhanced LC2MOS process that provides
low power dissipation yet gives high switching speed and low on
resistance.
The on resistance profile is very flat over the full analog input
range ensuring good linearity and low distortion when switching
audio signals. High switching speed also makes the parts suit-
able for video signal switching. CMOS construction ensures
ultralow power dissipation making the parts ideally suited for
portable and battery powered instruments.
The ADG441, ADG442 and ADG444 contain four indepen-
dent SPST switches. Each switch of the ADG441 and ADG444
turns on when a logic low is applied to the appropriate control
input. The ADG442 switches are turned on with a logic high on
the appropriate control input. The ADG441 and ADG444
switches differ in that the ADG444 requires a 5 V logic power
supply which is applied to the VL pin. The ADG441 and
ADG442 do not have a VL pin, the logic power supply being
generated internally by an on-chip voltage generator.
FUNCTIONAL BLOCK DIAGRAMS
IN1
IN2
ADG441
ADG444
IN3
IN4
S1
IN1
D1
S2
IN2
D2
S3
IN3
D3
S4
IN4
D4
ADG442
SWITCHES SHOWN FOR A LOGIC "1" INPUT
S1
D1
S2
D2
S3
D3
S4
D4
Each switch conducts equally well in both directions when ON
and has an input signal range that extends to the power sup-
plies. In the OFF condition, signal levels up to the supplies are
blocked. All switches exhibit break-before-make switching action
for use in multiplexer applications. Inherent in the design is low
charge injection for minimum transients when switching the
digital inputs.
PRODUCT HIGHLIGHTS
1. Extended Signal Range
The ADG441/ADG442/ADG444 are fabricated on an en-
hanced LC2MOS, trench-isolated process, giving an in-
creased signal range that extends to the supply rails.
2. Low Power Dissipation
3. Low RON
4. Trench Isolation Guards Against Latch Up
A dielectric trench separates the P and N channel transistors
thereby preventing latch up even under severe overvoltage
conditions.
5. Break-Before-Make Switching
This prevents channel shorting when the switches are config-
ured as a multiplexer.
6. Single Supply Operation
For applications where the analog signal is unipolar, the
ADG441/ADG442/ADG444 can be operated from a single
rail power supply. The parts are fully specified with a single
+12 V power supply.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703
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TRENCH ISOLATION
In the ADG441, ADG442 and ADG444, an insulating oxide
layer (trench) is placed between the NMOS and the PMOS
transistors of each CMOS switch. Parasitic junctions, which oc-
cur between the transistors in junction isolated switches, are
eliminated, the result being a completely latch-up proof switch.
In junction isolation, the N and P wells of the PMOS and
NMOS transistors form a diode that is reverse-biased under
normal operation. However, during overvoltage conditions, this
diode becomes forward biased. A silicon-controlled rectifier
(SCR) type circuit is formed by the two transistors causing a sig-
nificant amplification of the current which, in turn, leads to
latch up. With trench isolation, this diode is removed, the result
being a latch-up proof switch.
Trench isolation also leads to lower leakage currents. The
ADG441, ADG442 and ADG444 have a leakage current
of 0.5 nA as compared with a leakage current of several
nanoamperes in non-trench isolated switches. Leakage current is
an important parameter in sample-and-hold circuits, this current
being responsible for the discharge of the holding capacitor with
time causing droop. The ADG441/ADG442/ADG444’s low
leakage current, along with its fast switching speeds, make it
suitable for fast and accurate sample-and-hold circuits.
ADG441/ADG442/ADG444
NMOS
PMOS
LOCOS
P-WELL
N-WELL
TRENCH
BURIED OXIDE LAYER
SUBSTRATE (BACK GATE)
Figure 1. Trench Isolation
Typical Performance Characteristics
100
TA = +25°C
80
VDD = +12V
VSS = –12V
60
VDD = +5V
VSS = –5V
VDD = +10V
VSS = –10V
40
VDD = +15V
VSS = –15V
20
–15 –10 –5
0
5
VD (VS) – Volts
10 15
Figure 2. RON as a Function of VD (VS): Dual Supply
170
150
130
110
90
70
50
30
10
0
VDD = +5V
VSS = 0V
VDD = +10V
VSS = 0V
TA = +25°C
VDD = +12V
VSS = 0V
VDD = +15V
VSS = 0V
3
6
9 12
15
VD (VS) – Volts
Figure 3. RON as a Function of VD (VS): Single Supply
REV. 0
–5–
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for ADG441 electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ ADG441.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
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| ADG444 | The function is LC2MOS Quad SPST Switches. Analog Devices | |
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