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PDF ASI10592 Data sheet ( Hoja de datos )
| Número de pieza | ASI10592 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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HF10-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF10-12F is Designed for
FEATURES:
• PG = 20 dB min. at 10 W/30 MHz
• IMD3 = -30 dBc max. at 10 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 4.5 A
VCBO
36 V
VCEO
18 V
VEBO
PDISS
TJ
T STG
θ JC
4.0 V
80 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
2.2 OC/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
E
A
C
Ø.125 NOM.
FULL R
J
.125
BE
C
D
E
F
GH I
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .785 / 19.94
C .720 / 18.29
D .970 / 24.64
E
F .004 / 0.10
G .085 / 2.16
H .160 / 4.06
I
J .240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10592
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 50 mA
BVCES
IC = 50 mA
BVCEO
IC = 50 mA
BVEBO
IE = 5 mA
ICES VCE = 15 V
hFE VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
36
36
18
4.0
5
10 200
UNITS
V
V
V
V
mA
---
Cob VCB = 12.5 V
f = 1.0 MHz
100
pF
GPE
IMD3
VCC = 12.5 V
POUT = 10 W(PEP)
ICQ = 25 mA
f = 30 MHz
15
18 --- dB
-30 dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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