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A29L004V Schematic ( PDF Datasheet ) - AMIC Technology

Teilenummer A29L004V
Beschreibung 512K X 8 Bit CMOS 3.0 Volt-only/ Boot Sector Flash Memory
Hersteller AMIC Technology
Logo AMIC Technology Logo 




Gesamt 30 Seiten
A29L004V Datasheet, Funktion
Preliminary
Features
n Single power supply operation
- Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
- Regulated voltage range: 3.0 to 3.6 volt read and write
operations for compatibility with high performance 3.3
volt microprocessors
n Access times:
- 70/90 (max.)
n Current:
- 4 mA typical active read current
- 20 mA typical program/erase current
- 200 nA typical CMOS standby
- 200 nA Automatic Sleep Mode current
n Flexible sector architecture
- 16 Kbyte/ 8 KbyteX2/ 32 Kbyte/ 64 KbyteX7 sectors
- Any combination of sectors can be erased
- Supports full chip erase
- Sector protection:
A hardware method of protecting sectors to prevent
any inadvertent program or erase operations within
that sector. Temporary Sector Unprotect feature
allows code changes in previously locked sectors
n Unlock Bypass Program Command
- Reduces overall programming time when issuing
multiple program command sequence
n Top or bottom boot block configurations available
n Embedded Algorithms
- Embedded Erase algorithm will automatically erase
the entire chip or any combination of designated
sectors and verify the erased sectors
- Embedded Program algorithm automatically writes
and verifies data at specified addresses
A29L004 Series
512K X 8 Bit CMOS 3.0 Volt-only,
Boot Sector Flash Memory
n Typical 100,000 program/erase cycles per sector
n 20-year data retention at 125°C
- Reliable operation for the life of the system
n Compatible with JEDEC-standards
- Pinout and software compatible with single-power-
supply Flash memory standard
- Superior inadvertent write protection
n Data Polling and toggle bits
- Provides a software method of detecting completion
of program or erase operations
n Ready / BUSY pin (RY / BY )
- Provides a hardware method of detecting completion
of program or erase operations (not available on 32-
pin PLCC & (s)TSOP packages)
n Erase Suspend/Erase Resume
- Suspends a sector erase operation to read data from,
or program data to, a non-erasing sector, then
resumes the erase operation
n Hardware reset pin (RESET )
- Hardware method to reset the device to reading array
data (not available on 32 pin PLCC & (s)TSOP
packages)
n Package options
- 40-pin TSOP (forward type), 32-pin PLCC or (s)TSOP
(forward type)
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AMIC Technology, Corp.






A29L004V Datasheet, Funktion
A29L004 Series
Requirements for Reading Array Data
To read array data from the outputs, the system must drive
the CE and OE pins to VIL. CE is the power control and
selects the device. OE is the output control and gates
array data to the output pins. WE should remain at VIH all
the time during read operation. The internal state machine
is set for reading array data upon device power-up, or after
a hardware reset. This ensures that no spurious alteration
of the memory content occurs during the power transition.
No command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid data
on the device data outputs. The device remains enabled for
read access until the command register contents are
altered.
See "Reading Array Data" for more information. Refer to the
AC Read Operations table for timing specifications and to
the Read Operations Timings diagram for the timing
waveforms, lCC1 in the DC Characteristics table represents
the active current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which
includes programming data to the device and erasing
sectors of memory), the system must drive WE and CE to
VIL, and OE to VIH. The device features an Unlock Bypass
mode to facilitate faster programming. Once the device
enters the Unlock Bypass mode, only two write cycles are
required to program a byte, instead of four.
The “Byte Program Command Sequence” section has
details on programming data to the device using both
standard and Unlock Bypass command sequence. An
erase operation can erase one sector, multiple sectors, or
the entire device. The Sector Address Tables indicate the
address range that each sector occupies. A "sector
address" consists of the address inputs required to uniquely
select a sector. See the "Command Definitions" section for
details on erasing a sector or the entire chip, or
suspending/resuming the erase operation.
After the system writes the autoselect command sequence,
the device enters the autoselect mode. The system can
then read autoselect codes from the internal register (which
is separate from the memory array) on I/O7 - I/O0. Standard
read cycle timings apply in this mode. Refer to the
"Autoselect Mode" and "Autoselect Command Sequence"
sections for more information.
ICC2 in the DC Characteristics table represents the active
current specification for the write mode. The "AC
Characteristics" section contains timing specification tables
and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status bits
on I/O7 - I/O0. Standard read cycle timings and ICC read
specifications apply. Refer to "Write Operation Status" for
more information, and to each AC Characteristics section
for timing diagrams.
Standby Mode
When the system is not reading or writing to the device, it
can place the device in the standby mode. In this mode,
current consumption is greatly reduced, and the outputs are
placed in the high impedance state, independent of the OE
input.
The device enters the CMOS standby mode when the CE
& RESET pins ( CE only on 32-pin PLCC & (s)TSOP
packages) are both held at VCC ± 0.3V. (Note that this is a
more restricted voltage range than VIH.) If CE and RESET
(N/A on 32-pin PLCC & (s)TSOP packages) are held at VIH,
but not within VCC ± 0.3V, the device will be in the standby
mode, but the standby current will be greater. The device
requires the standard access time (tCE) before it is ready to
read data.
If the device is deselected during erasure or programming,
the device draws active current until the operation is
completed.
ICC3 and ICC4 in the DC Characteristics tables represent the
standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy
consumption. The device automatically enables this mode
when addresses remain stable for tACC +30ns. The
automatic sleep mode is independent of the CE , WE and
OE control signals. Standard address access timings
provide new data when addresses are changed. While in
sleep mode, output data is latched and always available to
the system. ICC4 in the DC Characteristics table represents
the automatic sleep mode current specification.
Output Disable Mode
When the OE input is at VIH, output from the device is
disabled. The output pins are placed in the high impedance
state.
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A29L004V pdf, datenblatt
A29L004 Series
Command Definitions
Writing specific address and data commands or sequences
into the command register initiates device operations. The
Command Definitions table defines the valid register
command sequences. Writing incorrect address and data
values or writing them in the improper sequence resets the
device to reading array data.
All addresses are latched on the falling edge of WE or CE ,
whichever happens later. All data is latched on the rising edge
of WE or CE , whichever happens first. Refer to the
appropriate timing diagrams in the "AC Characteristics"
section.
Reading Array Data
The device is automatically set to reading array data after
device power-up. No commands are required to retrieve data.
The device is also ready to read array data after completing
an Embedded Program or Embedded Erase algorithm. After
the device accepts an Erase Suspend command, the device
enters the Erase Suspend mode. The system can read array
data using the standard read timings, except that if it reads at
an address within erase-suspended sectors, the device
outputs status data. After completing a programming
operation in the Erase Suspend mode, the system may once
again read array data with the same exception. See "Erase
Suspend/Erase Resume Commands" for more information on
this mode.
The system must issue the reset command to re-enable the
device for reading array data if I/O5 goes high, or while in the
autoselect mode. See the "Reset Command" section, next.
See also "Requirements for Reading Array Data" in the
"Device Bus Operations" section for more information. The
Read Operations table provides the read parameters, and
Read Operation Timings diagram shows the timing diagram.
Reset Command
Writing the reset command to the device resets the device to
reading array data. Address bits are don't care for this
command. The reset command may be written between the
sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array data.
Once erasure begins, however, the device ignores reset
commands until the operation is complete.
The reset command may be written between the sequence
cycles in a program command sequence before programming
begins. This resets the device to reading array data (also
applies to programming in Erase Suspend mode). Once
programming begins, however, the device ignores reset
commands until the operation is complete.
The reset command may be written between the sequence
cycles in an autoselect command sequence. Once in the
autoselect mode, the reset command must be written to
return to reading array data (also applies to autoselect during
Erase Suspend).
If I/O5 goes high during a program or erase operation, writing
the reset command returns the device to reading array data
(also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host system to
access the manufacturer and devices codes, and determine
whether or not a sector is protected. The Command Definitions
table shows the address and data requirements. This method
is an alternative to that shown in the Autoselect Codes (High
Voltage Method) table, which is intended for PROM
programmers and requires VID on address bit A9.
The autoselect command sequence is initiated by writing two
unlock cycles, followed by the autoselect command. The
device then enters the autoselect mode, and the system may
read at any address any number of times, without initiating
another command sequence.
A read cycle at address XX00h retrieves the manufacturer
code and another read cycle at XX03h retrieves the
continuation code. A read cycle at address XX01h returns the
device code. A read cycle containing a sector address (SA)
and the address 02h in returns 01h if that sector is protected,
or 00h if it is unprotected. Refer to the Sector Address tables
for valid sector addresses.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Byte Program Command Sequence
Programming is a four-bus-cycle operation. The program
command sequence is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program address and data are written next, which in turn
initiate the Embedded Program algorithm. The system is not
required to provide further controls or timings. The device
automatically provides internally generated program pulses
and verify the programmed cell margin. Table 5 shows the
address and data requirements for the byte program command
sequence.
When the Embedded Program algorithm is complete, the
device then returns to reading array data and addresses are
longer latched. The system can determine the status of the
program operation by using I/O7, I/O6, or RY/ BY (N/A on 32-pin
PLCC & (s)TSOP packages). See “Write Operation Status” for
information on these status bits.
Any commands written to the device during the Embedded
Program Algorithm are ignored. Note that a hardware reset
immediately terminates the programming operation. The Byte
Program command sequence should be reinitiated once the
device has reset to reading array data, to ensure data integrity.
Programming is allowed in any sequence and across sector
boundaries. A bit cannot be programmed from a “0” back to a
“1”. Attempting to do so may halt the operation and set I/O5 to
“1”, or cause the Data Polling algorithm to indicate the
operation was successful. However, a succeeding read will
show that the data is still “0”. Only erase operations can
convert a “0” to a “1”.
PRELIMINARY (October, 2002, Version 0.0)
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