A29DL323UV-90 Datasheet PDF - AMIC Technology
| Part Number | A29DL323UV-90 | |
| Description | 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode) | |
| Manufacturers | AMIC Technology | |
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A29DL323 Series
32M-Bit CMOS Low Voltage Dual Operation Flash Memory
Preliminary 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
Features
n Two bank organization enabling simultaneous execution of
erase / program and read
n Bank organization: 2 banks (8 Mbits + 24 Mbits)
n Memory organization:
- 4,194,304 words x 8 bits (BYTE mode)
- 2,097,152 words x 16 bits (WORD mode)
n Sector organization:
71 sectors (8 Kbytes / 4 Kwords × 8 sectors, 64 Kbytes /
32 Kwords × 63 sectors)
n 2 types of sector organization
- T type: Boot sector allocated to the highest address
(sector)
- B type: Boot sector allocated to the lowest address
(sector)
n 3-state output
n Automatic program
- Program suspend / resume
n Unlock bypass program
n Automatic erase
- Chip erase
- Sector erase (sectors can be combined freely)
n Erase suspend / resume
n Program / Erase completion detection
- Detection through data polling and toggle bits
- Detection through RY/ BY pin
n Sector group protection
- Any sector group can be protected
- Any protected sector group can be temporary
unprotected
n Sectors can be used for boot application
n Hardware reset and standby using RESET pin
n Automatic sleep mode
n Boot block sector protect by WP (ACC) pin
n Conforms to common flash memory interface (CFI)
n Extra One Time Protect Sector provided
Part No.
A29DL323
Access
time
(Max.)
90ns
Operating
supply
voltage
2.7V~
3.6V
Power supply current
(Active mode)
(Max.)
16mA 30mA
Standby
current
(Max.)
5A
n Operating ambient temperature: -40 to 85°C
n Program / erase time
- Program: 9.0 µs / byte (TYP.)
11.0 µs / word (TYP.)
- Sector erase: 0.7 s (TYP.)
n Number of program / erase: 1,000,000 times (MIN.)
n Package options
- 48-pin TSOP (I) or 63-ball TFBGA
General Description
The A29DL323 is a flash memory organized of 33,554,432
bits and 71 sectors. Sectors of this memory can be erased
at a low voltage (2.7 to 3.6 V) supplied from a single power
source, or the contents of the entire chip can be erased.
Two modes of memory organization, BYTE mode
(4,194,304 words × 8 bits) and WORD mode (2,097,152
words × 16 bits), are selectable so that the memory can be
programmed in byte or word units.
The A29DL323 can be read while its contents are being
erased or programmed. The memory cell is divided into two
banks. While sectors in one bank are being erased or
programmed, data can be read from the other bank thanks
to the simultaneous execution architecture. The banks are
8 Mbits and 24 Mbits.
This flash memory comes in two types. The T type has a
boot sector located at the highest address (sector) and the
B type has a boot sector at the lowest address (sector).
Because the A29DL323 enables the boot sector to be
erased, it is ideal for storing a boot program. In addition,
program code that controls the flash memory can be also
stored, and the program code can be programmed or
erased without the need to load it into RAM. Eight small
sectors for storing parameters are provided, each of which
can be erased in 8 Kbytes units.
Once a program or erase command sequence has been
executed, an automatic program or automatic erase
function internally executes program or erase and
verification automatically.
Because the A29DL323 can be electrically erased or
programmed by writing an instruction, data can be
reprogrammed on-board after the flash memory has been
installed in a system, making it suitable for a wide range of
applications.
PRELIMINARY (May, 2002, Version 0.0)
1
AMIC Technology, Inc.
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A29DL323 Series
Absolute Maximum Ratings*
Storage Temperature (Tstg) . . . . . . . . . . -55°C to + 125°C
Operating Ambient Temperature (TA) . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to + 85°C
Input / Output Voltage with Respect to GND
WP (ACC), RESET . . . . . . . . . . . . -0.5V Note1 to 13.0V
All Pins except WP (ACC), RESET . . . . . . . . . . . . . . .
. . . . . . . . . . . . . -0.5V Note1 to VCC + 0.4 (4.0V max.) Note2
Supply Voltage with Respect to GND (VCC)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 4.0V
Notes:
1. -2.0V (Min.) (Pulse width ≤ 20ns)
2. VCC + 0.5V (Max.) (Pulse width ≤ 20ns)
Bus Operations
The following table shows the operation modes of the dual
operation flash memory. Before turning on power, input
*Comments
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of
this device at these or any other conditions above
those indicated in the operational sections of these
specification is not implied or intended. Exposure to
the absolute maximum rating conditions for extended
periods may affect device reliability.
Recommended Operating Conditions
Operating Ambient Temperature (TA) . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . +2.7V to +3.6V
GND ± 0.2 V to the RESET until VCC ≥ VCC (min.).
Table 1. A29DL323 Bus Operations
Operation
CE OE WE I/O15, A6 A1 A0
A-1
I/O0 to
I/O7
I/O8 to RESET WP
I/O15
(ACC)
Read (Note)
BYTE mode L L H A-1 Address input Data output Hi-Z
H
X
WORD mode L
LH
X Address input
Data output
HX
Write
BYTE mode L H L A-1 Address input Data input Hi-Z
H Note3
WORD mode L H L
X Address input
Data input
H Note3
Standby
HXX
X XXX
Hi-Z
Hi-Z H
X
Hardware reset / Standby
XXX
X XXX
Hi-Z
Hi-Z L
X
Output Disable
L H H X XXX
Hi-Z
Hi-Z H
X
Temporary Sector Group Unprotect X X X
X XXX
Hi-Z or
VID Note3
Data input / output
Automatic Sleep BYTE mode L L H A-1 Address input Data output Hi-Z
Mode
WORD mode L
LH
X Address input
Data output
H
H
X
X
Boot Block Sector Protect
XXX
X XXX
Hi-Z or
XL
Data input / output
Accelerated Mode BYTE mode L H L A-1 Address input Data input Hi-Z
H VACC
WORD mode L H L
X Address input
Data input
H VACC
Note: When OE = VIL, VIL can be applied to WE . When OE = VIH, a write operation is started.
Remarks: 1. H : VIH, L : VIL, : VIH or VIL, VID : 11.5 V to 12.5 V, VACC : 8.5 V to 9.5 V
2. If an address is held longer than the minimum read cycle time (tRC), the automatic sleep mode is set.
3. If WP (ACC)=VIL, sector 0,1,140, and 141 remain protected. If WP (ACC)=VIH, protection on sectors 0,1,140, and 141
depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block
Protection and Unprotection”. If WP (ACC)=VHH, all sectors will be unprotected.
PRELIMINARY (May, 2002, Version 0.0)
5
AMIC Technology, Inc.
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| Information | Total 30 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ A29DL323UV-90.PDF Datasheet ] | |
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