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ACST6-7S Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer ACST6-7S
Beschreibung OVER VOLTAGE PROTECTED AC POWER SWITCH
Hersteller STMicroelectronics
Logo STMicroelectronics Logo 




Gesamt 9 Seiten
ACST6-7S Datasheet, Funktion
®
ASD™
AC Switch Family
ACST6-7S
OVER VOLTAGE PROTECTED
AC POWER SWITCH
MAIN APPLICATIONS
s AC static switching in appliance & industrial
control systems
s Induction motor drive actuator for:
- Refrigerator / Freezer compressor
- Dishwasher spray pump
- Clothes drier tumble
s Actuator for the thermostat of a refrigerator or
freezer
FEATURES
s VDRM / VRRM = +/- 700V
s Avalanche controlled device
s IT(RMS)=1.5 A with no heat sink and Tamb = 40°C
s IT(RMS) = 6A with TCASE = 105 °C
s High noise immunity: static dV/dt > 200 V/µs
s Gate triggering current : IGT < 10 mA
s Snubberless turn off commutation:
(dI/dt)c > 3.5A/ms
s D2PAK, I2PAK, TO-220FPAB or TO-220
package
BENEFITS
s Enables equipment to meet IEC61000-4-5
standards
s High off-state reliability with planar technology
s Needs no external overvoltage protection
s Direct interface with the microcontroller
s Reduces the power component count
DESCRIPTION
The ACST6-7Sx belongs to the AC power switch
family built around the ASD technology. This high
performance device is adapted to home appliances
or industrial systems and drives an induction motor
up to 6A.
This ACST switch embeds a triac structure with a
high voltage clamping device to absorb the inductive
turn-off energy and withstand line transients such as
those described in the IEC61000-4-5 standards.
OUT
G
OUT
COM
TO-220AB
ACST6-7ST
G
OUT
COM
TO-220FPAB
ACST6-7SFP
OUT
G
COM
D2PAK
ACST6-7SG
OUT
G
OUT
COM
I2PAK
ACST6-7SR
FUNCTIONAL DIAGRAM:
OUT
G
COM
January 2002 - Ed: 7F
1/9






ACST6-7S Datasheet, Funktion
ACST6-7S
Fig. 6: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponding value of I2t.
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
ITSM (A), I²t (A²s)
1000
100
dI/dt limitation:
100A/µs
Tj initial=25°C
ITSM
10
1
0.01
I²t
tp (ms)
0.10 1.00
10.00
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
3.0
2.5
2.0
IGT QIII
1.5
1.0 IGT QI, QII, IH & IL
0.5
0.0
-40 -20
0
Tj(°C)
20 40 60 80 100 120 140
Fig. 8: Relative variation of critical rate of decrease
of main current versus reapplied (dV/dt)c (typical
values).
Fig. 9: Relative variation of critical rate of decrease
of main current versus junction teperature.
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
(dV/dt)c (V/µs)
1.0 10.0
Tj=125°C
100.0
(dI/dt)c [Tj] / (dI/dt)c [Tj=125°C]
6
5
4
3
2
1
Tj (°C)
0
0 25 50 75
100 125
Fig. 10: Relative variation of dV/dt immunity
versus junction temperature for different values of
gate to com resistance (gate open is the reference
value).
dV/dt [Tj] / dV/dt [Tj=125°C]
4.0
3.5
Rgk = 470W
3.0
2.5
2.0
Rgk = 1kW
1.5
Gate open
1.0
0.5
0.0
0
Tj (°C)
25 50 75
Rgk < 220W
100 125
150
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (printed circuit
board FR4, copper thickness: 35µm).
Rth(j-a) (°C/W)
70
60
50
40
30
20
10
0
0246
D²PAK
S(cm²)
8 10 12 14 16 18 20
6/9

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