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ACS132K Schematic ( PDF Datasheet ) - Intersil Corporation

Teilenummer ACS132K
Beschreibung Radiation Hardened Quad 2-Input NAND Schmitt Trigger
Hersteller Intersil Corporation
Logo Intersil Corporation Logo 




Gesamt 2 Seiten
ACS132K Datasheet, Funktion
Data Sheet
ACS132MS
November 1998
File Number 4546
Radiation Hardened Quad 2-Input NAND
Schmitt Trigger
The Radiation Hardened ACS132MS is a Quad 3-Input NAND
Gate with Schmitt Trigger inputs. When any input to one of the
gates is at a LOW level, the corresponding Y output will be
HIGH. A HIGH level on both inputs will cause the output for that
gate to be LOW. The Schmitt Trigger input stage provides
400mV (Min) of hysteresis and permits input signals with longer
rise times. All inputs are buffered and the outputs are designed
for balanced propagation delay and transition times.
The ACS132MS is fabricated on a CMOS Silicon on
Sapphire (SOS) process, which provides an immunity to
Single Event Latch-up and the capability of highly reliable
performance in any radiation environment. These devices
offer significant power reduction and faster performance
when compared to ALSTTL types.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when ordering.
Detailed Electrical Specifications for the ACS132MS are
contained in SMD 5962-98625. A “hot-link” is provided
on our homepage with instructions for downloading.
http://www.intersil.com/data/sm/index.htm
Ordering Information
ORDERING NUMBER
5962F9862501VCC
ACS132D/SAMPLE-03
5962F9862501VXC
ACS132K/SAMPLE-03
5962F9862501V9A
INTERNAL MKT. NUMBER
ACS132DMSR-03
ACS132D/SAMPLE-03
ACS132KMSR-03
ACS132K/SAMPLE-03
ACS132HMSR-03
Pinouts
ACS132MS
(SBDIP)
TOP VIEW
A1 1
B1 2
Y1 3
A2 4
B2 5
Y2 6
GND 7
14 VCC
13 B4
12 A4
11 Y4
10 B3
9 A3
8 Y3
Features
• QML Qualified Per MIL-PRF-38535 Requirements
• 1.25 Micron Radiation Hardened SOS CMOS
• Radiation Environment
- Latch-Up Free Under any Conditions
- Total Dose. . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD (Si)
- SEU Immunity . . . . . . . . . . . . <1 x 10-10 Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . . >100MeV/(mg/cm2)
• Input Logic Levels . . . . VIL = (0.3)(VCC), VIH = (0.7)(VCC)
• Hysteresis Voltage . . . . . . . . . . . . . . . . . . . . 400mV (Min)
• Output Current . . . . . . . . . . . . . . . . . . . . . . . . ±8mA (Min)
• Quiescent Supply Current . . . . . . . . . . . . . . 100µA (Max)
• Propagation Delay . . . . . . . . . . . . . . . . . . . . . 12ns (Max)
Applications
• High Speed Control Circuits
• Sensor Monitoring
• Low Power Designs
TEMP. RANGE (oC)
-55 to 125
25
-55 to 125
25
25
PACKAGE
14 Ld SBDIP
14 Ld SBDIP
14 Ld Flatpack
14 Ld Flatpack
Die
DESIGNATOR
CDIP2-T14
CDIP2-T14
CDFP4-F14
CDFP4-F14
N/A
A1
B1
Y1
A2
B2
Y2
GND
ACS132MS
(FLATPACK)
TOP VIEW
1 14
2 13
3 12
4 11
5 10
69
78
VCC
B4
A4
Y4
B3
A3
Y3
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999





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