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PDF AAT9125IAS-T1 Data sheet ( Hoja de datos )
| Número de pieza | AAT9125IAS-T1 | |
| Descripción | 30V N-Channel Power MOSFET | |
| Fabricantes | Advanced Analogic Technologies | |
| Logotipo |  |
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General Description
The AAT9125 30V N-Channel Power MOSFET is a
member of AnalogicTech's TrenchDMOS™ prod-
uct family. Using the ultra-high density proprietary
TrenchDMOS technology, this product demon-
strates high power handling and small size.
AAT9125
30V N-Channel Power MOSFET
Features
PWMSwitch™
• VDS(MAX) = 30V
• ID(MAX) = 12.5A @ 25°C
• Low RDS(ON):
• 9 mΩ @VGS = 10V
• 14 mΩ @ VGS = 4.5V
Applications
• DC-DC converters for mobile CPUs
• Battery-powered portable equipment
• High power density switch-mode supplies
• Point-of-use Power Supplies
SOP8 Package
Top View
DDDD
8765
1234
SSSG
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=150°C 1
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Source-Drain Diode) 1
Maximum Power Dissipation 1
TA = 25°C
TA = 70°C
Operating Junction and Storage Temperature Range
Value
30
±20
±12.5
±10
±52
2.25
2.5
1.6
-55 to 150
Units
V
A
W
°C
Thermal Characteristics
Symbol
Description
RθJA
RθJC
Typical Junction-to-Ambient 1
Typical Junction-to-Case
Note 1: Mounted on 1” x 1” FR4 Copper Board, 10 sec pulse width
9125.2001.12.0.9
Value
50
25
Units
°C/W
°C/W
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AAT9125IAS-T1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AAT9125IAS-T1 | 30V N-Channel Power MOSFET | Advanced Analogic Technologies |
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