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ACT-SF41632N-39F2C Schematic ( PDF Datasheet ) - Aeroflex Circuit Technology

Teilenummer ACT-SF41632N-39F2C
Beschreibung ACT-SF41632 High Speed 128Kx32 SRAM / 512Kx32 Flash Multichip Module
Hersteller Aeroflex Circuit Technology
Logo Aeroflex Circuit Technology Logo 




Gesamt 11 Seiten
ACT-SF41632N-39F2C Datasheet, Funktion
ACT-SF41632 High Speed
128Kx32 SRAM / 512Kx32 Flash
Multichip Module
CIRCUIT TECHNOLOGY
FEATURES
www.aeroflex.com
s 4 – 128K x 8 SRAMs & 4 – 512K x 8 Flash Die in
One MCM
s Access Times of 25ns, 35ns (SRAM) and
60ns, 70ns, 90ns (Flash)
s Organized as 128K x 32 of SRAM and 512K x 32
of Flash Memory with Common Data Bus
FLASH MEMORY FEATURES
s Sector Architecture (Each Die)
q 8 Equal Sectors of 64K bytes each
q Any combination of sectors can be erased with
one command sequence.
s +5V Programing, +5V Supply
s Low Power CMOS
s Embedded Erase and Program Algorithms
s Input and Output TTL Compatible Design
s Hardware and Software Write Protection
s MIL-PRF-38534 Compliant MCMs Available
s Page Program Operation and Internal Program
s Decoupling Capacitors and Multiple Grounds for Control Time.
Low Noise
s 10,000 Erase/Program Cycles
s Commercial, Industrial and Military Temperature
Ranges
s Industry Standard Pinouts
s TTL Compatible Inputs and Outputs
s Packaging – Hermetic Ceramic
q 66–Lead, PGA-Type, 1.385"SQ x 0.245"max,
Aeroflex code# "P1,P5 with/without shoulders)"
q 68–Lead, Dual-Cavity CQFP(F2), 0.88"SQ x
.20"max (.18 max thickness available, contact
factory for details) (Drops into the 68 Lead
JEDEC .99"SQ CQFJ footprint)
FLEX LA
ISO
9001
CE R T I F I E D
Block Diagram – PGA Type Package(P1 & P5) & CQFP(F2)
OE
A0–A18
SCE
FCE
FWE1 SWE1
FWE2 SWE2
FWE3 SWE3
FWE4 SWE4
512K X 8 FLASH
www.DataSheet4U.co12m8K X 8 SRAM
512K X 8 FLASH
128K X 8 SRAM
512K X 8 FLASH
128K X 8 SRAM
512K X 8 FLASH
128K X 8 SRAM
I/O0-7
I/O8-15
I/O16-23
I/O24-31
PIN DESCRIPTION
I/O0-31
Data I/O
A0–18
Address Inputs
FWE1-4 Flash Write Enables
SWE1-4 SRAM Write Enables
FCE Flash Chip Enable
SCE SRAM Chip Enable
OE Output Enable
NC Not Connected
VCC Power Supply
GND
Ground
eroflex Circuit Technology - Advanced Multichip Modules © SCD3851 REV A 5/21/98






ACT-SF41632N-39F2C Datasheet, Funktion
AC Waveforms for Flash Memory Read Operations
Addresses
FCE
OE
FWE
Outputs
tRC
Addresses Stable
tACC
tOE
tDF
High Z
tCE
tOH
Output Valid
High Z
Write/Erase/Program
Operation for Flash Memory, FWE Controlled
Data Polling
Addresses
5555H
tWC
PA
tAS tAH
PA
FCE
OE
FWE
Data
tGHWL
tWP
tCE
tDS
tWPH
AOH
tDH
PD
tWHWH1
D7 DOUT
5.0V
www.DataSheet4U.com
Notes:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D7 is the 0utput of the complement of the data written to the deviced.
4. Dout is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
tRC
tOE
tCE
tDF
tOH
Aeroflex Circuit Technology
6 SCD3851 REV A 5/21/98 Plainview NY (516) 694-6700

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