ACT-SF2816N-39F18T Datasheet PDF - Aeroflex Circuit Technology
| Part Number | ACT-SF2816N-39F18T | |
| Description | ACT-SF2816 High Speed 128Kx16 SRAM / 512Kx16 FLASH Multichip Module | |
| Manufacturers | Aeroflex Circuit Technology | |
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There is a preview and ACT-SF2816N-39F18T download ( pdf file ) link at the bottom of this page. Total 11 Pages | ||
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ACT–SF2816 High Speed
128Kx16 SRAM / 512Kx16 FLASH
Multichip Module
FEATURES
CIRCUIT TECHNOLOGY
www.aeroflex.com
I 2 – 128K x 8 SRAMs & 2 – 512K x 8 Flash Die in
One MCM
I Access Times of 25ns (SRAM) and 60ns (Flash)
or 35ns (SRAM) and 70 or 90ns (Flash)
I Organized as 128K x 16 of SRAM and 512K x 16
of Flash Memory with Separate Data Buses
I Both Blocks of Memory are User Configurable as
512KX8 AND 1MX8 Respectively
I Low Power CMOS
I Input and Output TTL Compatible Design
I MIL-PRF-38534 Compliant MCMs Available
I Decoupling Capacitors and Multiple Grounds for
Low Noise
I Industrial and Military Temperature Ranges
I Industry Standard Pinouts
Note: Programming information available upon request
I Packaging – Hermetic Ceramic
G 66 Pin, 1.08" x 1.08" x .160" PGA Type, No Shoulder,
Aeroflex code# "P3"
G 66 Pin, 1.08" x 1.08" x .185" PGA Type, With
Shoulder, Aeroflex code# "P7"
G 68 Lead, .94" x .94" x .140" Single-Cavity Small
Outline Gull Wing, Aeroflex code# "F18" (Drops into
the 68 Lead JEDEC .99"SQ CQFJ footprint)
I DESC SMD – TBD
FLASH MEMORY FEATURES
I Sector Architecture (Each Die)
G 8 Equal Sectors of 64K bytes each
G Any combination of sectors can be erased with one
command sequence
I +5V Programing, +5V Supply
I Embedded Erase and Program Algorithms
I Hardware and Software Write Protection
I Internal Program Control Time.
I 10,000 Erase / Program Cycles
Block Diagram – PGA Type Packages (P3 & P7) & CQFP (F18)
SWE1 SCE1 SWE2 SCE2 FWE1 FCE1 FWE2 FCE2
OE
A0 – A18
128Kx8
SRAM
128Kx8
SRAM
512Kx8
Flash
512Kx8
Flash
8
www.DataSheet4U.com SI/O0-7
8
SI/O8-15
8
FI/O0-7
8
FI/O8-15
Pin Description
FI/O0-15 Flash Data I/O
SI/O0-15 SRAM Data I/O
A0–18
Address Inputs
FWE1-2 Flash Write Enables
SWE1-2 SRAM Write Enables
FCE1-2 Flash Chip Enables
SCE1-2 SRAM Chip Enables
OE Output Enable
NC Not Connected
VCC Power Supply
GND
Ground
eroflex Circuit Technology - Advanced Multichip Modules © SCD3853 REV B 5/18/99
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Flash AC Characteristics – Read Only Operations
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Parameter
Symbol
–60 –70 –90
Units
JEDEC Stand’d Min Max Min Max Min Max
Read Cycle Time
tAVAV
tRC 60
70
90
ns
Address Access Time
tAVQV
tACC
60 70 90 ns
Chip Enable Access Time
tELQV
tCE
60 70 90 ns
Output Enable to Output Valid
tGLQV
tOE
30 35 35 ns
Chip Enable to Output High Z (1)
tEHQZ
tDF
20 20 20 ns
Output Enable High to Output High Z(1)
tGHQZ
tDF
20 20 20 ns
Output Hold from Address, CE or OE Change, Whichever is First
tAXQX
tOH 0
0
0
ns
Note 1. Guaranteed by design, but not tested
Flash AC Characteristics – Write / Erase / Program Operations, FWE Controlled
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Parameter
Symbol
–60 –70 –90
Units
JEDEC Stand’d Min Max Min Max Min Max
Write Cycle Time
tAVAC
tWC 60
70
90
ns
Chip Enable Setup Time
tELWL
tCE 0
0
0
ns
Write Enable Pulse Width
tWLWH
tWP 40
45
45
ns
Address Setup Time
tAVWL
tAS 0
0
0
ns
Data Setup Time
tDVWH
tDS 40
45
45
ns
Data Hold Time
tWHDX
tDH 0
0
0
ns
Address Hold Time
tWLAX
tAH 45
45
45
ns
Write Enable Pulse Width High
tWHWL
tWPH
20
20
20
ns
Duration of Byte Programming Operation
tWHWH1
14 TYP 14 TYP 14 TYP
µs
Sector Erase Time
Read Recovery Time before Write
tWHWH2
tGHWL
30 30 30
000
Sec
µs
Vcc Setup Time
tVCE 50 50 50 µs
Chip Programming Time
Chip Enable Hold Time
50 50 50
tOEH 1
10
10
10
Sec
ns
Chip Erase Time
tWHWH3
120 120 120 Sec
1. Toggle and Data Polling only.
Flash AC Characteristics – Write / Erase / Program Operations, FCE Controlled
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Parameter
Symbol
–60 –70 –90
Units
JEDEC Stand’d Min Max Min Max Min Max
Write Cycle Time
tAVAC
tWC 60
70
90
ns
Write Enable Setup Time
tWLEL
tWS 0
0
0
ns
Chip Enable Pulse Width
tELEH
tCP 40
45
45
ns
Address Setup Time
tAVEL
tAS 0
0
0
ns
Data Setup Time
tDVEH
tDS 40
45
45
ns
Data Hold Time
www.DAdadtareSshseHeto4ldUT.cimome
tEHDX
tDH 0
0
0
tELAX
tAH 45
45
45
ns
ns
Chip Enable Pulse Width High
tEHEL
tCPH
20
20
20
ns
Duration of Byte Programming
tWHWH1
14 TYP 14 TYP 14 TYP µs
Sector Erase Time
Read Recovery Time
tWHWH2
tGHEL
30 30 30
000
Sec
ns
Chip Programming Time
50 50 50 Sec
Chip Erase Time
tWHWH3
120 120 120 Sec
Aeroflex Circuit Technology
5 SCD3853 REV B 5/18/99 Plainview NY (516) 694-6700
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for ACT-SF2816N-39F18T electronic component. |
| Information | Total 11 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ ACT-SF2816N-39F18T.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| ACT-SF2816N-39F18C | The function is ACT-SF2816 High Speed 128Kx16 SRAM / 512Kx16 FLASH Multichip Module. Aeroflex Circuit Technology | |
| ACT-SF2816N-39F18I | The function is ACT-SF2816 High Speed 128Kx16 SRAM / 512Kx16 FLASH Multichip Module. Aeroflex Circuit Technology | |
| ACT-SF2816N-39F18M | The function is ACT-SF2816 High Speed 128Kx16 SRAM / 512Kx16 FLASH Multichip Module. Aeroflex Circuit Technology | |
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