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PDF ACT-SF128K32N-37P1C Data sheet ( Hoja de datos )
| Número de pieza | ACT-SF128K32N-37P1C | |
| Descripción | ACT-SF128K32 High Speed 128Kx32 SRAM / 128Kx32 Flash Multichip Module | |
| Fabricantes | Aeroflex Circuit Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ACT-SF128K32N-37P1C (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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ACT–SF128K16 High Speed
128Kx16 SRAM/FLASH Multichip Module
FEATURES
CIRCUIT TECHNOLOGY
www.aeroflex.com
s 2 – 128K x 8 SRAMs & 2 – 128K x 8 Flash Die in
One MCM
s Access Times of 25ns (SRAM) and 60ns (Flash) or
35ns (SRAM) and 70 or 90ns (Flash)
s 128K x 16 SRAM
s 128K x 16 5V Flash
s Organized as 128K x 16 of SRAM and 128K x 16 of
Flash Memory with Separate Data Buses
s Both Blocks of Memory are User Configurable as
256K x 8
s Low Power CMOS
s Input and Output TTL Compatible Design
s MIL-PRF-38534 Compliant MCMs Available
s Decoupling Capacitors and Multiple Grounds for Low
Noise
s Industrial and Military Temperature Ranges
s Industry Standard Pinouts
Note: Programming information available upon request
s Packaging – Hermetic Ceramic
q 66 Pin, 1.08" x 1.08" x .160" PGA Type, No Shoulder,
Aeroflex code# "P3"
q 66 Pin, 1.08" x 1.08" x .185" PGA Type, With
Shoulder, Aeroflex code# "P7"
q 68 Lead, .94" x .94" x .140" Single-Cavity Small
Outline Gull Wing, Aeroflex code# "F18" (Drops into
the 68 Lead JEDEC .99"SQ CQFJ footprint)
s DESC SMD Pending – 5962-96900
FLASH MEMORY FEATURES
s Sector Architecture (Each Die)
q 8 Equal Sectors of 16K bytes each
q Any combination of sectors can be erased with one
command sequence.
s +5V Programing, 5V ±10% Supply
s Embedded Erase and Program Algorithms
s Hardware and Software Write Protection
s Internal Program Control Time.
s 10,000 Erase/Program Cycles
Block Diagram – PGA Type Package (P3,P7) and CQFP (F18)
SWE1 SCE1 SWE2 SCE2 FWE1 FCE1 FWE2 FCE2
OE
A0 – A16
128Kx8
SRAM
128Kx8
SRAM
128Kx8
Flash
128Kx8
Flash
8
SI/O0-7
8
SI/O8-15
8
FI/O0-7
8
FI/O8-15
Pin Description
FI/O0-15 Flash Data I/O
SI/O0-15 SRAM Data I/O
A0–16
Address Inputs
FWE1-2 Flash Write Enables
SWE1-2 SRAM Write Enables
FCE1-2 Flash Chip Enables
SCE1-2 SRAM Chip Enables
OE Output Enable
NC Not Connected
VCC Power Supply
GND
Ground
eroflex Circuit Technology - Advanced Multichip Modules © SCD1677 REV A 4/28/98
1 page  
Flash AC Characteristics – Read Only Operations
(Vcc = 5.0V, Vss = 0V, TC = -55°C to +125°C)
Parameter
Symbol
–60 –70 –90
Units
JEDEC Stand’d Min Max Min Max Min Max
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable to Output Valid
Chip Enable to Output High Z (1)
Output Enable High to Output High Z(1)
Output Hold from Address, CE or OE Change, Whichever is First
Note 1. Guaranteed by design, but not tested
tAVAV
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tAXQX
tRC 60 70 90
ns
tACC 60 70 90 ns
tCE 60 70 90 ns
tOE 30 35 40 ns
tDF 20 20 25 ns
tDF 20 20 25 ns
tOH 0 0 0
ns
Flash AC Characteristics – Write/Erase/Program Operations, FWE Controlled
(Vcc = 5.0V, Vss = 0V, TC = -55°C to +125°C)
Parameter
Symbol
–60 –70 –90
Units
JEDEC Stand’d Min Max Min Max Min Max
Write Cycle Time
Chip Enable Setup Time
Write Enable Pulse Width
tAVAC
tWC 60
70
90
tELWL
tCE 0
0
0
tWLWH
tWP 30
35
45
ns
ns
ns
Address Setup Time
Data Setup Time
tAVWL
tAS 0
0
0
tDVWH
tDS 30
30
45
ns
ns
Data Hold Time
Address Hold Time
tWHDX
tDH 0
0
0
tWLAX
tAH 45
45
45
ns
ns
Chip Enable Hold Time
Write Enable Pulse Width High
tWHEH
tCH 0
0
0
tWHWL
tWPH
20
20
20
ns
ns
Duration of Byte Programming Operation
Sector Erase Time
Chip Erase Time
Read Recovery Time before Write
Vcc Setup Time
Output Enable Setup Time
Output Enable Hold Time1
Note: 1. For Toggle and Data Polling.
tWHWH1
tWHWH2
tWHWH3
tGHWL
14 TYP 14 TYP 14 TYP
µs
60 60 60 Sec
120 120 120 Sec
000
µs
tVCE
50
50
50
µs
tOES 12.5 12.5 12.5 Sec
tOEH
10
10
10
ns
Flash AC Characteristics – Write/Erase/Program Operations, FCE Controlled
(Vcc = 5.0V, Vss = 0V, TC = -55°C to +125°C)
Parameter
Symbol
–60 –70 –90
Units
JEDEC Stand’d Min Max Min Max Min Max
Write Cycle Time
Write Enable Setup Time
Chip Enable Pulse Width
Address Setup Time
tAVAC
tWC 60
70
90
tWLEL
tWS 0
0
0
tELEH
tCP 35
35
50
tAVEL
tAS 0
0
0
ns
ns
ns
ns
Data Setup Time
Data Hold Time
tDVEH
tDS 30
30
50
tEHDX
tDH 0
0
0
ns
ns
Address Hold Time
Write Enable Hold from Write Enable High
tELAX
tAH 45
45
50
tEHWH
tWH 0
0
0
ns
ns
Chip Enable Pulse Width High
Duration of Byte Programming
Sector Erase Time
Chip Erase Time
Read Recovery Time
Chip Programming Time
tEHEL
tWHWH1
tWHWH2
tWHWH3
tGHEL
tCPH
20
20
20
ns
14 TYP 14 TYP 14 TYP µs
60 60 60 Sec
120 120 120 Sec
000
ns
12.5 12.5 12.5 Sec
Aeroflex Circuit Technology
5 SCD1677 REV A 4/28/98 Plainview NY (516) 694-6700
5 Page 
CIRCUIT TECHNOLOGY
Ordering Information
Model Number
DESC SMD Number
Speed
ACT–SF128K16N –26P3Q
5462-96900*
25(S) / 60(F) ns
ACT–SF128K16N –37P3Q
5462-96900*
35(S) / 70(F) ns
ACT–SF128K16N –39P3Q
5462-96900*
35(S) / 90(F) ns
ACT–SF128K16N –26P7Q
5462-96900*
25(S) / 60(F) ns
ACT–SF128K16N –37P7Q
5462-96900*
35(S) / 70(F) ns
ACT–SF128K16N –39P7Q
5462-96900*
35(S) / 90(F) ns
ACT–SF128K16N –26F18Q
5462-96900*
25(S) / 60(F) ns
ACT–SF128K16N –37F18Q
5462-96900*
35(S) / 70(F) ns
ACT–SF128K16N –39F18Q
Note: (S) = Speed for SRAM, (F) = Speed for FLASH
* Pending
5462-96900*
35(S) / 90(F) ns
Package
1.08"SQ PGA-Type
1.08"SQ PGA-Type
1.08"SQ PGA-Type
1.08"SQ PGA-Type
1.08"SQ PGA-Type
1.08"SQ PGA-Type
.94"sq CQFP
.94"sq CQFP
.94"sq CQFP
Part Number Breakdown
ACT– S F 128K 16 N– 26 P7 Q
Aeroflex Circuit
Technology
Screening
Memory Type
S (SRAM) & F (FLASH) Combo
Memory Depth
C = Commercial Temp, 0°C to +70°C
I = Industrial Temp, -40°C to +85°C
T = Military Temp, -55°C to +125°C
M = Military Temp, -55°C to +125°C, Screening *
Q = MIL-PRF-38534 Compliant / SMD
Options, N = none
Memory Width, Bits
Memory Speed cODE
26 = 25ns SRAM & 60ns FLASH
37 = 35ns SRAM & 70ns FLASH
39 = 35ns SRAM & 90ns FLASH
Package Type & Size
Surface Mount Packages
Thru-Hole Packages
F18 = .94"SQ 68 Lead Dual-Cavity P3 = 1.085"SQ PGA 66 Pins
CQFP
with out shoulder
P7 = 1.085"SQ PGA 66 Pins
with shoulder
* Screened to the individual test methods of MIL-STD-883
Specification subject to change without notice
Aeroflex Circuit Technology
35 South Service Road
Plainview New York 11830
Aeroflex Circuit Technology
Telephone: (516) 694-6700
FAX:
(516) 694-6715
Toll Free Inquiries: 1-(800) 843-1553
11 SCD1677 REV A 4/28/98 Plainview NY (516) 694-6700
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet ACT-SF128K32N-37P1C.PDF ] | |
Hoja de datos destacado
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| ACT-SF128K32N-37P1C | ACT-SF128K32 High Speed 128Kx32 SRAM / 128Kx32 Flash Multichip Module | Aeroflex Circuit Technology |
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