Datenblatt-pdf.com


ACTS10MS Schematic ( PDF Datasheet ) - Intersil Corporation

Teilenummer ACTS10MS
Beschreibung Radiation Hardened Triple Three-Input NAND Gate
Hersteller Intersil Corporation
Logo Intersil Corporation Logo 




Gesamt 8 Seiten
ACTS10MS Datasheet, Funktion
ACTS10MS
April 1995
Radiation Hardened
Triple Three-Input NAND Gate
Features
• 1.25 Micron Radiation Hardened SOS CMOS
• Total Dose 300K RAD (Si)
• Single Event Upset (SEU) Immunity
<1 x 10-10 Errors/Bit-Day (Typ)
• SEU LET Threshold >80 MEV-cm2/mg
• Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to ALSTTL Logic
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 0.8V Max
- VIH = VCC/2V Min
• Input Current 1µA at VOL, VOH
Description
The Intersil ACTS10MS is a radiation hardened triple three-input
NAND gate. A high on all inputs forces the output to a low state.
The ACTS10MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of the
radiation hardened, high-speed, CMOS/SOS Logic Family.
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C
TOP VIEW
A1 1
B1 2
A2 3
B2 4
C2 5
Y2 6
GND 7
14 VCC
13 C1
12 Y1
11 C3
10 B3
9 A3
8 Y3
14 LEAD CERAMIC FLATPACK
MIL-STD-1835 DESIGNATOR CDFP3-F14, LEAD FINISH C
TOP VIEW
A1
B1
A2
B2
C2
Y2
GND
1 14
2 13
3 12
4 11
5 10
69
78
VCC
C1
Y1
C3
B3
A3
Y3
Ordering Information
PART NUMBER
ACTS10DMSR
ACTS10KMSR
ACTS10D/Sample
ACTS10K/Sample
ACTS10HMSR
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
+25oC
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
14 Lead SBDIP
14 Lead Ceramic Flatpack
14 Lead SBDIP
14 Lead Ceramic Flatpack
Die
Truth Table
INPUTS
OUTPUT
An Bn Cn
Yn
LLL
H
L LH
H
LHL
H
L HH
H
HL L
H
HLH
H
HH L
H
HHH
L
NOTE: L = Logic Level Low, H = Logic Level High
Functional Diagram
An
(1, 3, 9)
Bn
(2, 4, 10)
Cn
(5, 11, 13)
Yn
(12, 6, 8)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
Spec Number 518823
File Number 3631






ACTS10MS Datasheet, Funktion
ACTS10MS
Die Characteristics
DIE DIMENSIONS:
88 mils x 88 mils
2,240mm x 2,240mm
METALLIZATION:
Type: AlSiCu
Metal 1 Thickness: 6.75kÅ (Min), 8.25kÅ (Max)
Metal 2 Thickness: 9kÅ (Min), 11kÅ (Max)
GLASSIVATION:
Type: SiO2
Thickness: 8kÅ ±1kÅ
DIE ATTACH:
Material: Silver Glass or JM 7000 after 7/1/95
WORST CASE CURRENT DENSITY:
< 2.0 x 105A/cm2
BOND PAD SIZE:
> 4.3 mils x 4.3 mils
> 110µm x 110µm
Metallization Mask Layout
ACTS10MS
B1 A1 VCC C1
(02) (01) (14) (13)
A2 (03)
B2 (04)
NC
C2 (05)
(12) Y1
(11) C3
NC
(10) B3
(06) (07) (08) (09)
Y2 GND Y3
A3
6
Spec Number 518823

6 Page







SeitenGesamt 8 Seiten
PDF Download[ ACTS10MS Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
ACTS10MSRadiation Hardened Triple Three-Input NAND GateIntersil Corporation
Intersil Corporation

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche