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ADG819 Schematic ( PDF Datasheet ) - Analog Devices

Teilenummer ADG819
Beschreibung 0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches
Hersteller Analog Devices
Logo Analog Devices Logo 




Gesamt 12 Seiten
ADG819 Datasheet, Funktion
a
0.5 CMOS
1.8 V to 5.5 V 2:1 Mux/SPDT Switches
ADG819/ADG820
FEATURES
Low On Resistance 0.8 Max at 125؇C
0.25 Max On Resistance Flatness
1.8 V to 5.5 V Single Supply
200 mA Current Carrying Capability
Automotive Temperature Range: –40؇C to +125؇C
Rail-to-Rail Operation
6-Lead SOT-23 Package, 8-Lead SOIC Package, and
6-Bump MicroCSP (Micro Chip Scale Package) ADG819
Fast Switching Times
Typical Power Consumption (<0.01 W)
TTL-/CMOS-Compatible Inputs
Pin Compatible with the ADG719 (ADG819)
APPLICATIONS
Power Routing
Battery-Powered Systems
Communication Systems
Data Acquisition Systems
Cellular Phones
Modems
PCMCIA Cards
Hard Drives
Relay Replacement
FUNCTIONAL BLOCK DIAGRAM
ADG819/
ADG820
S2
D
S1
IN
SWITCHES SHOWN
FOR A LOGIC “1” INPUT
GENERAL DESCRIPTION
The ADG819 and the ADG820 are monolithic, CMOS, SPDT
(single-pole, double-throw) switches. These switches are designed
on a submicron process that provides low power dissipation yet
gives high switching speed, low On resistance, and low leakage
currents.
Low power consumption and an operating supply range of 1.8 V
to 5.5 V make the ADG819 and ADG820 ideal for battery-pow-
ered, portable instruments.
Each switch of the ADG819 and the ADG820 conducts equally
well in both directions when on. The ADG819 exhibits break-
before-make switching action, thus preventing momentary shorting
when switching channels. The ADG820 exhibits make-before-
break action.
The ADG819 and the ADG820 are available in a 6-lead SOT-23
package and an 8-lead µSOIC package. The ADG819 is also
available in a 2 × 3 bump 1.14 mm × 2.18 mm MicroCSP
package. This chip occupies only a 1.14 mm × 2.18 mm area,
making it the ideal candidate for space-constrained applications.
PRODUCT HIGHLIGHTS
1. Very low ON resistance, 0.5 typical
2. 1.8 V to 5.5 V single-supply operation
3. High current carrying capability
4. Tiny 6-lead SOT-23 package, 8-lead µSOIC package,
and 2 × 3 bump 1.14 mm × 2.18 mm MicroCSP package
(ADG819 only)
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002






ADG819 Datasheet, Funktion
ADG819/ADG820 –Typical Performance Characteristics
1.0
TA = 25؇C
0.9
0.8
VDD = 2.7V
0.7
VDD = 3V
0.6
0.5
0.4 VDD = 3.3V
0.3
0.2
VDD = 4.5V VDD = 5V
VDD = 5.5V
0.1
0
012345
VD, VS – V
TPC 1. ON Resistance vs. VD (VS)
1.0
VDD = 3V
0.8
0.6
0.4
0.2
TA = +85؇C
TA = +125؇C
TA = +25؇C
TA = –40؇C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VD, VS – V
TPC 4. ON Resistance vs. VD (VS) for Different Temperatures
10
TA = 25؇C
9 VDD = 1.8V
8
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VD, VS – V
TPC 2. ON Resistance vs. VD (VS)
1.8
1.0
VDD = 5V
0.8
TA = +125؇C
0.6 TA = +85؇C
0.4
TA = +25؇C
TA = –40؇C
0.2
0
012345
VD, VS – V
TPC 5. ON Resistance vs. VD (VS) for Different Temperatures
10
VDD = 3V, 5V
8
6
4
ID, IS (ON)
2
0 IS (OFF)
–2
0 20 40 60 80 100 120
TEMPERATURE – ؇C
TPC 3. Leakage Currents vs. Temperatures
50
40
tON
VDD = 3V
30
VDD = 5V
20
tOFF
10
VDD = 3V, 5V
0
–40 –20
0
20 40 60 80
TEMPERATURE – ؇C
100 120
TPC 6. tON/tOFF Times vs. Temperature (ADG819)
–6– REV. 0

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